{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BC807-16WE6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BC807-16WE6327","canonicalUrl":"https://icboms.com/infineon/BC807-16WE6327","factsUrl":"https://icboms.com/api/mcp/products/BC807-16WE6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BC807-16WE6327 PNP transistor, 45 V Vce breakdown, 500 mA Ic max, 200 MHz transition frequency, 250 mW power dissipation, SOT-23-3 surface-mount package, active production.","salesMarkdown":"## PNP transistor for general-purpose switching and amplification The Infineon BC807-16WE6327 is a PNP bipolar junction transistor in the standard SOT-23-3 surface-mount package (PG-SOT23-3-11). It is designed for general-purpose switching and linear amplification applications where a 45 V collector-emitter breakdown and 500 mA continuous collector current are sufficient. The 200 MHz transition frequency supports moderate-speed switching, and the minimum DC current gain of 100 at 100 mA, 1 V provides predictable base-drive requirements. The 150°C junction temperature rating allows operation in warm environments such as automotive engine compartments or industrial control cabinets. The 45 V Vce breakdown sets the maximum supply rail this transistor can handle. For a 24 V industrial bus with transients, derating to 80% leaves 36 V headroom — comfortable. The 500 mA collector current covers solenoid drives, relay coils, and small-signal amplification. Saturation voltage is 700 mV at 50 mA base drive and 500 mA collector current, so power dissipation at 500 mA is roughly 350 mW — above the 250 mW package limit, meaning continuous operation at that current needs derating or pulsed duty.","metaTitle":"BC807-16WE6327 PNP Transistor, 45 V, 500 mA, 200 MHz","metaDescription":"Infineon BC807-16WE6327 PNP general-purpose transistor. 45 V Vce, 500 mA Ic, 200 MHz ft, hFE 100 min. SOT-23-3 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Bulk","Power - Max":"250 mW","Mounting Type":"Surface Mount","Package / Case":"TO-236-3, SC-59, SOT-23-3","Product Status":"Active","Transistor Type":"PNP","lifecycle_stage":"eol_hot","Operating Temperature":"150°C(TJ)","Frequency - Transition":"200MHz","Supplier Device Package":"PG-SOT23-3-11","Vce Saturation (Max) @ Ib, Ic":"700mV @ 50mA, 500mA","Current - Collector (Ic) (Max)":"500 mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 100mA, 1V","Voltage - Collector Emitter Breakdown (Max)":"45 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.0200","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/c151a3db4e605dbccead12dd1bf9aa3d.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is BC807-16WE6327 RoHS compliant?","answer":"Yes, the BC807-16WE6327 is RoHS compliant as standard for Infineon's SOT-23-3 packaged transistors of this generation."},{"question":"What is the hFE of BC807-16WE6327?","answer":"The minimum DC current gain (hFE) is 100 at a collector current of 100 mA and collector-emitter voltage of 1 V. Typical gain is higher, but the guaranteed minimum is what matters for base-drive resistor calculation."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BC807-16WE6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BC807-16WE6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}