{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRLR3705ZTRL","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRLR3705ZTRL","canonicalUrl":"https://icboms.com/infineon/AUIRLR3705ZTRL","factsUrl":"https://icboms.com/api/mcp/products/AUIRLR3705ZTRL","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® N-Channel MOSFET, AUIRLR3705ZTRL, 55 V drain-source, 42 A continuous drain current, 8 mOhm Rds(on) max at 10 V, DPAK (TO-252) surface-mount package, -55 to 175 °C junction temperature.","salesMarkdown":"The AUIRLR3705ZTRL is a 55 V, 42 A N-channel MOSFET from Infineon's HEXFET® line, in a DPAK (TO-252) surface-mount package. The 8 mOhm Rds(on) at 10 V gate drive is the number that sets the conduction loss — at 42 A that's about 14 W of dissipation before you even switch, so the thermal pad on the DPAK needs a decent copper pour to keep the junction under 175 °C. ## 66 nC gate charge — easy to drive, moderate speed Gate charge is 66 nC at 5 V. That is low enough that a standard gate driver IC or even a discrete totem-pole can push it through a few tens of kHz without the driver heating up. The 3 V threshold at 250 µA means it will turn on cleanly with 5 V logic, but you want a solid 10 V gate drive to hit that 8 mOhm Rds(on) figure. ## Junction temperature range -55 to 175 °C The junction is rated from -55 to 175 °C. That is the full automotive temperature grade — it survives under-hood heat soak and cold cranking. For a 130 W power dissipation ceiling, the limiting factor is the board's ability to pull heat out of the DPAK tab, not the silicon itself. ## Active production — no LTB worry It is a current-production part that can be quoted for both prototype and production volumes through the independent channel.","metaTitle":"AUIRLR3705ZTRL N-Channel MOSFET, 55V 42A DPAK","metaDescription":"Infineon HEXFET N-channel MOSFET, 55V 42A in DPAK. 8 mOhm Rds(on) at 10 V. Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"series":"HEXFET®","power_w":"130.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0029","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"55.0","Vgs(Th) (Max) @ Id":"3 V @ 250µA","switching_current_a":"42.0","Rds On (Max) @ Id, Vgs":"8mOhm @ 42 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"66 nC @ 5 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.08","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/b80db86598f74dc948d6c81d8bb3aa1d.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is AUIRLR3705ZTRL a direct replacement for IRLR3705ZTRL?","answer":"The AUIRLR3705ZTRL is the automotive-qualified version of the IRLR3705ZTRL. Both are 55 V, 42 A N-channel MOSFETs in DPAK with the same pinout and similar Rds(on). The AUIRLR3705ZTRL is rated for the -55 to 175 °C junction temperature range, making it a drop-in for designs that need the wider temperature grade. Confirm the gate drive voltage in your BOM — both use the same 3 V threshold."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRLR3705ZTRL","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRLR3705ZTRL when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}