{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRL3705ZS","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRL3705ZS","canonicalUrl":"https://icboms.com/infineon/AUIRL3705ZS","factsUrl":"https://icboms.com/api/mcp/products/AUIRL3705ZS","rawCanonicalId":null},"summary":{"shortDescription":"Infineon AUIRL3705ZS, N-Channel HEXFET® MOSFET, 55 V drain-source, 75 A continuous drain, 8 mOhm Rds(on) at 52 A, 10 V, D2PAK surface-mount, -55 to 175 °C junction temperature.","salesMarkdown":"The AUIRL3705ZS is an N-channel HEXFET® power MOSFET from Infineon, rated for a drain-source voltage of 55 V and a continuous drain current of 75 A. It comes in a D2PAK surface-mount package, which is the standard large-gauge power-package for automated assembly on a copper-clad board. At full load the on-resistance will climb with junction temperature, so the 8 mOhm number is the starting point for the thermal budget, not the running number. Gate charge is 60 nC at 5 V, which is moderate for a 75 A FET. A gate driver that can source and sink a few amps will switch this part in the tens of nanoseconds; at lower drive current the switching edges soften and the crossover loss goes up. ## Junction temperature and where this part lives Rated junction temperature spans -55 to 175 °C. That 175 °C ceiling is typical for automotive-grade power MOSFETs and tells you the die attach and mould compound are specced for high ambient — under-hood electronics, motor drives in sealed enclosures, or any spot where the board sees 85 °C+ air and the FET dissipates tens of watts. The maximum power dissipation is 130 W, but that number assumes the case is held at 25 °C. In a real D2PAK layout with a 1-inch-square copper pad on a 2-layer board, the practical dissipation is closer to 30–40 W before the junction hits 175 °C. ## Gate drive and threshold — no 3.3 V logic here The gate threshold is 3 V maximum at 250 µA drain. That means a 5 V logic signal will turn the FET on hard, but a 3.3 V GPIO from an MCU sits right at the threshold edge — you want a proper gate driver or a level-shift stage to guarantee the 10 V gate drive the Rds(on) is specified at. Absolute maximum gate-source voltage is ±16 V, so a 12 V gate-drive rail is safe and leaves margin for ringing on the gate node. A 15 V rail works too but leaves only 1 V headroom before the abs-max — keep the gate loop tight. ## Sourcing and lifecycle — still a current-production part The D2PAK (TO-263) package is a standard surface-mount power package, so the part is compatible with reflow assembly and automated pick-and-place. No special handling beyond normal MSL precautions.","metaTitle":"AUIRL3705ZS N-Channel HEXFET® 55V 75A D2PAK MOSFET","metaDescription":"AUIRL3705ZS N-channel HEXFET® MOSFET, 55V drain-source, 75A continuous drain, 8 mOhm Rds(on) at 52A, 10V. D2PAK surface mount. Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±16 V","series":"HEXFET®","power_w":"130.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0029","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"55.0","Vgs(Th) (Max) @ Id":"3 V @ 250µA","switching_current_a":"75.0","Rds On (Max) @ Id, Vgs":"8mOhm @ 52 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"60 nC @ 5 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.35","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://rocelec.widen.net/view/pdf/owymhekwlu/INFN-S-A0002296977-1.pdf?t.download=true&u=5oefqw","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of AUIRL3705ZS?","answer":"This is the on-resistance at 25 °C junction; expect it to rise with temperature per the normalised curve in the datasheet."},{"question":"What is the maximum drain current of AUIRL3705ZS?","answer":"The continuous drain current rating is 75 A at a case temperature of 25 °C. Derate for higher case temperature — the actual current the part can carry in a given layout depends on the thermal resistance of the PCB copper."},{"question":"Is AUIRL3705ZS a direct replacement for IRF3705?","answer":"The AUIRL3705ZS is the Infineon-branded version of the IRF3705 (the IR part was originally International Rectifier, now part of Infineon). The two share the same basic ratings — 55 V, 75 A, 8 mOhm Rds(on) — and the same D2PAK footprint. In most designs they are drop-in interchangeable, but always confirm the gate threshold and gate charge match your driver circuit."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRL3705ZS","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRL3705ZS when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}