{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRFU8405","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRFU8405","canonicalUrl":"https://icboms.com/infineon/AUIRFU8405","factsUrl":"https://icboms.com/api/mcp/products/AUIRFU8405","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies HEXFET® series, N-Channel MOSFET, AUIRFU8405, 40 V drain-source, 100 A switching current, 1.98 mOhm Rds(on), IPAK through-hole package, Bulk.","salesMarkdown":"## Low Rds(on) for high-current switching The AUIRFU8405 is an N-Channel HEXFET MOSFET from Infineon, rated for 40 V drain-source and 100 A continuous switching current. The 1.98 mOhm maximum on-resistance at 90 A and 10 V gate drive means conduction losses stay low even at high load — the part dissipates 163 W at the package limit, so the real thermal ceiling is set by the heatsink and ambient, not the die. ## Gate drive and switching budget Gate threshold voltage is 3.9 V maximum at 100 µA drain current, so a 5 V logic-level drive turns it on fully. The total gate charge of 155 nC at 10 V sets the driver current needed for a target switching frequency — a 100 kHz PWM cycle drawing 155 nC per transition requires an average gate current of 15.5 mA from the driver, well within a standard gate-driver IC's capability. The ±20 V maximum gate-source rating gives headroom for gate-drive overshoot in hard-switching topologies, but the 0.0052 µF input capacitance means the driver must source and sink enough peak current to charge and discharge that capacitance within the dead-time budget. The IPAK (TO-251) through-hole package suits boards where a screw or clip heatsink mounts directly to the tab — common in power supplies and DC-DC converters where the tab is the primary thermal path.","metaTitle":"Infineon AUIRFU8405 N-Channel MOSFET, 40V, 100A, IPAK","metaDescription":"Infineon AUIRFU8405 N-Channel HEXFET MOSFET, 40V, 100A, 1.98mOhm Rds(on). Active production. Sourced to order. Request RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"163.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","capacitance_uf":"0.0052","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"40.0","Vgs(Th) (Max) @ Id":"3.9 V @ 100µA","switching_current_a":"100.0","Rds On (Max) @ Id, Vgs":"1.98mOhm @ 90 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"155 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.95","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/b3e6afc2b81da29132eb1096e8d85772.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRFU8405","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRFU8405 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}