{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRFU8403","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRFU8403","canonicalUrl":"https://icboms.com/infineon/AUIRFU8403","factsUrl":"https://icboms.com/api/mcp/products/AUIRFU8403","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® AUIRFU8403, N-Channel MOSFET, 40 V, 100 A, 3.1 mOhm Rds(on) at 76 A, 10 V, 99 nC gate charge, -55 to 175 °C Tj, I-PAK through-hole package.","salesMarkdown":"## 40 V, 100 A N-channel HEXFET — conduction loss and switching profile The AUIRFU8403 is an Infineon HEXFET N-channel power MOSFET rated for 40 V drain-source and 100 A continuous drain current. ## 175 °C junction — where this part lives This matters for designs that see sustained high ambient temperatures — motor drives, engine bay electronics, or industrial power supplies where the heatsink is shared with other hot components. ## Gate charge and drive budget Total gate charge is 99 nC at Vgs = 10 V. For a 100 A-rated device this is a moderate figure — it means the gate driver needs to supply about 99 nC per switching cycle. At 100 kHz switching frequency the average gate drive current is roughly 9.9 mA, which most dedicated MOSFET drivers can handle without external boost.","metaTitle":"AUIRFU8403 MOSFET N-CH 40V 100A I-PAK, 3.1mOhm Rds(on)","metaDescription":"AUIRFU8403 N-channel HEXFET power MOSFET, 40V, 100A, 3.1mOhm Rds(on) at 76A, 10V. 175°C Tj max. Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"99.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","capacitance_uf":"0.0032","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"40.0","Vgs(Th) (Max) @ Id":"3.9 V @ 100µA","switching_current_a":"100.0","Rds On (Max) @ Id, Vgs":"3.1mOhm @ 76 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"99 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.89","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://rocelec.widen.net/view/pdf/03z9rgr6nz/IRSDS18588-1.pdf?t.download=true&u=5oefqw","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of AUIRFU8403 at rated current?","answer":"Maximum on-resistance is 3.1 mOhm at Id = 76 A with Vgs = 10 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRFU8403","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRFU8403 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}