{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRFU4292","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRFU4292","canonicalUrl":"https://icboms.com/infineon/AUIRFU4292","factsUrl":"https://icboms.com/api/mcp/products/AUIRFU4292","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies HEXFET® N-Channel MOSFET, AUIRFU4292, 100 W, 9.3 A switching, 345 mOhm Rds(on), Through Hole, Bulk.","salesMarkdown":"The AUIRFU4292: With a switching current of 9.3 A and a gate charge of 20 nC at 10 V, the part switches cleanly without a heavy gate-driver load — the 20 nC Qg means the driver only needs to source a few hundred mA for a few tens of nanoseconds to turn it on fully. ## Gate threshold and voltage limits for reliable turn-on The gate threshold voltage is 5 V maximum at 50 µA drain current, so a 10 V gate drive (as used for the Rds(on) spec) gives plenty of overdrive to keep the FET in the linear region under load. The ±20 V Vgs rating means the gate can handle transients without zener clamping — useful in a noisy 12 V or 24 V automotive rail where inductive kickback is common. The through-hole package (likely TO-251 or similar) makes it a field-swappable part — no hot-air station needed, just a soldering iron and a steady hand. The bulk packaging means it ships loose, not taped, so it is easy to pull one for a prototype or a quick repair.","metaTitle":"AUIRFU4292 Infineon N-Channel MOSFET, 100 W, ±20 Vgs","metaDescription":"AUIRFU4292 N-Channel HEXFET MOSFET, 9.3 A switching, 345 mOhm Rds(on), -55 to 175 °C. Active production, sourced to order. Request a quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"100.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","capacitance_uf":"0.0007","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"250.0","Vgs(Th) (Max) @ Id":"5 V @ 50µA","switching_current_a":"9.3","Rds On (Max) @ Id, Vgs":"345mOhm @ 5.6 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"20 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.73","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/0c4aeca8906849844e51f87fdb391997.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of AUIRFU4292 and at what test conditions?","answer":"The maximum on-resistance is 345 mOhm at a drain current of 5.6 A with a 10 V gate drive. This is the figure to use for conduction-loss calculations in a switching application."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRFU4292","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRFU4292 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}