{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRFSL8403","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRFSL8403","canonicalUrl":"https://icboms.com/infineon/AUIRFSL8403","factsUrl":"https://icboms.com/api/mcp/products/AUIRFSL8403","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies HEXFET® series, N-Channel MOSFET, AUIRFSL8403, 40 V, 123 A switching current, 3.3 mOhm Rds(on), TO-262 through-hole package, Bulk.","salesMarkdown":"The AUIRFSL8403 is an N-channel power MOSFET from Infineon's HEXFET® series, rated for 40 V drain-source and 123 A continuous switching current. The 3.3 mOhm maximum on-resistance at 70 A, 10 V gate drive is the figure that governs conduction losses in a high-current rail. The TO-262 through-hole package (I2PAK variant) suits designs where the heatsink mounts directly to the PCB or chassis — the tab is the drain, and the three pins are gate and source. Bulk packaging means it ships loose in tubes or trays, not taped for automated placement. ## Gate drive and switching characteristics Gate threshold voltage is 3.9 V maximum at 100 µA drain current — this sets the minimum gate drive for the device to start conducting. The total gate charge is 93 nC at 10 V, which determines the driver current needed to hit a target switching frequency; a 93 nC gate at 50 kHz draws about 4.65 mA from the gate driver, well within a standard driver's capability. The ±20 V gate-source rating provides margin against ringing on the gate node in a hard-switching topology — a snubber or gate resistor is still advisable if the layout has more than 10 nH of parasitic inductance in the gate loop.","metaTitle":"AUIRFSL8403 Infineon N-Ch MOSFET 40V 123A TO-262","metaDescription":"Infineon AUIRFSL8403 N-channel HEXFET MOSFET, 40V, 123A switching current, 3.3mOhm Rds(on), TO-262 package. Active production, sourced per RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"99.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","capacitance_uf":"0.0032","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"40.0","Vgs(Th) (Max) @ Id":"3.9 V @ 100µA","switching_current_a":"123.0","Rds On (Max) @ Id, Vgs":"3.3mOhm @ 70 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"93 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.90","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[{"question":"What is the AUIRFSL8403's gate threshold voltage and why does it matter?","answer":"Maximum gate threshold is 3.9 V at 100 µA drain current. This means the device starts conducting when the gate-source voltage exceeds roughly 3 V — a 5 V logic-level gate drive will turn it on fully, but a 3.3 V microcontroller output may not reach the threshold without a level shifter or driver."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRFSL8403","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRFSL8403 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}