{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRFSL6535","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRFSL6535","canonicalUrl":"https://icboms.com/infineon/AUIRFSL6535","factsUrl":"https://icboms.com/api/mcp/products/AUIRFSL6535","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies AUIRFSL6535, Automotive AEC-Q101 HEXFET® N-Channel MOSFET, 300 V, 19 A, 185 mOhm, TO262-3-901, Through Hole, Bulk.","salesMarkdown":"## What the 185 mOhm Rds(on) means for your BOM The AUIRFSL6535 is an N-channel power MOSFET from Infineon's Automotive HEXFET® series, rated 300 V drain-source and 19 A continuous drain current in the TO262-3-901 through-hole package. At 11 A the dissipation hits about 22 W, well within the 210 W package capability, but the junction-to-case thermal path still needs a heatsink for sustained operation above a few amps. ## Gate charge and switching drive Total gate charge Qg is 57 nC maximum at Vgs = 10 V. That is modest — a typical gate driver with 1 A peak output can switch the FET in under 100 ns, but the 57 nC figure also tells you the gate drive current needed at a given frequency: at 100 kHz switching, the average gate drive current is about 5.7 mA, plus the miller plateau charge. The ±20 V gate-source rating gives headroom for ringing on long gate traces, but the 5 V threshold at 150 µA means the device is fully enhanced by 10 V logic, not 5 V — confirm your gate drive voltage is above 10 V to hit the rated Rds(on).","metaTitle":"AUIRFSL6535 N-Ch 300V 19A TO262-3-901, AEC-Q101","metaDescription":"Infineon AUIRFSL6535 N-channel MOSFET, 300V, 19A, 185mOhm Rds(on), TO262-3-901. Active, AEC-Q101 qualified. Quoted to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"Automotive, AEC-Q101, HEXFET®","power_w":"210.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","capacitance_uf":"0.0023","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"300.0","Vgs(Th) (Max) @ Id":"5 V @ 150µA","switching_current_a":"19.0","Rds On (Max) @ Id, Vgs":"185mOhm @ 11 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"57 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.44","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/3a8cd5e25972dfa2e51f2834b1474490.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of AUIRFSL6535 at the operating point?","answer":"This is the value to use for conduction loss calculations at the rated gate voltage."},{"question":"What is the gate charge and what does it mean for my driver?","answer":"Total gate charge is 57 nC maximum at Vgs = 10 V. A 1 A peak gate driver can switch the FET in under 100 ns; at 100 kHz the average gate drive current is about 5.7 mA."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRFSL6535","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRFSL6535 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}