{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRFS8405TRL","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRFS8405TRL","canonicalUrl":"https://icboms.com/infineon/AUIRFS8405TRL","factsUrl":"https://icboms.com/api/mcp/products/AUIRFS8405TRL","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET AUIRFS8405TRL, N-channel MOSFET, 40 V drain-source, 120 A continuous drain current, 2.3 mOhm max Rds(on) at 10 V, D2PAK surface-mount package, -55 to 175 °C junction temperature.","salesMarkdown":"## 2.3 mOhm Rds(on) at 10 V — the conduction loss floor The AUIRFS8405TRL is an Infineon HEXFET N-channel MOSFET rated for 40 V drain-source breakdown and 120 A continuous drain current. The headline spec is the 2.3 mOhm maximum on-resistance at Vgs=10 V and Id=100 A — that is the conduction loss floor at 25 °C junction temperature. In a 100 A load, the conduction loss sits at 23 W, well within the 163 W power dissipation rating of the D2PAK package when properly heatsunk. ## Gate charge and switching loss budget Total gate charge is 161 nC at Vgs=10 V. That is a substantial charge — the gate driver must source and sink that charge each switching cycle. At 100 kHz switching frequency, the average gate-drive current is 16.1 mA; the driver's peak current capability and the gate-loop inductance determine the turn-on and turn-off times. Plan the gate-drive circuit for at least 2 A peak to keep switching edges clean and avoid Miller-plateau dwell. ## Junction temperature range and thermal design The D2PAK (TO-263) package has an exposed drain tab on the top — the thermal pad on the PCB must be sized to the application's power dissipation. At 163 W maximum dissipation, a multi-layer board with thermal vias under the tab is the baseline; a heatsink on the tab further drops the junction-to-ambient thermal resistance. ## Lifecycle and sourcing No official replacement or second-source alternate is listed; the part is the current production variant in the HEXFET 40 V family.","metaTitle":"AUIRFS8405TRL MOSFET N-CH 40V 120A D2PAK, 2.3mOhm Rds(on)","metaDescription":"AUIRFS8405TRL N-channel HEXFET MOSFET, 40 V, 120 A, 2.3 mOhm Rds(on) at 10 V, D2PAK surface mount. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"163.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0052","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"40.0","Vgs(Th) (Max) @ Id":"3.9 V @ 100µA","switching_current_a":"120.0","Rds On (Max) @ Id, Vgs":"2.3mOhm @ 100 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"161 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.25","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/0742994aef2d41986035568d096b3dc0.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is AUIRFS8405TRL obsolete?","answer":"No — the product status is listed as active."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRFS8405TRL","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRFS8405TRL when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}