{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRFS4410Z","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRFS4410Z","canonicalUrl":"https://icboms.com/infineon/AUIRFS4410Z","factsUrl":"https://icboms.com/api/mcp/products/AUIRFS4410Z","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® series, AUIRFS4410Z, N-Channel MOSFET, 100 V, 97 A switching current, 9 mOhm Rds(on) max at 58 A, D2PAK surface mount, -55°C to 175°C Tj.","salesMarkdown":"## The 9 mOhm at 58 A — where the conduction loss floor sits The Infineon AUIRFS4410Z is a 100 V N-channel HEXFET in the automotive-grade D2PAK. Its 9 mOhm max on-resistance at 58 A and Vgs=10 V sets the conduction loss for a 48 V battery switch or a motor-drive H-bridge leg. That 9 mOhm is the datasheet ceiling at 25°C junction; the actual Rds(on) climbs with temperature per the normalised curve, so the thermal design should budget for roughly 1.4× at 125°C Tj. ## 97 A pulsed current and the SOA envelope The 97 A switching current rating defines the single-pulse avalanche and repetitive-pulse SOA boundary. For a 48 V battery disconnect or an inverter rail, the designer sizes the copper pour and heatsink such that the junction never exceeds 175°C during the worst-case fault — the part's Tj ceiling is 175°C, which is 25°C higher than a standard industrial FET and buys margin in under-hood or enclosed-drive enclosures. ## Gate charge and drive budget Qg is 120 nC at Vgs=10 V. At a 100 kHz switching frequency the gate driver must supply 12 mA average plus the peak current to charge the gate capacitance in the dead-time window. A typical 2 A gate-driver IC handles this comfortably, but the 120 nC figure also tells you the Miller plateau duration — relevant for cross-conduction prevention in a half-bridge.","metaTitle":"AUIRFS4410Z N-Channel HEXFET, 100V 97A, 9mOhm Rds(on)","metaDescription":"AUIRFS4410Z automotive N-channel HEXFET, 100V, 97A switching current, 9mOhm Rds(on) at 58A. Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","has_mpn":"IRFS4410","power_w":"230.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0048","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"100.0","Vgs(Th) (Max) @ Id":"4 V @ 150µA","switching_current_a":"97.0","Rds On (Max) @ Id, Vgs":"9mOhm @ 58 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"120 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.76","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/325a99acbb4660fe9416e02bdc92cf39.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is AUIRFS4410Z a direct replacement for IRFS4410Z?","answer":"The IRFS4410 is listed as a related MPN in the same HEXFET family, but the AUIRFS4410Z carries the automotive-grade qualification. The datasheet ratings — 100 V, 97 A, 9 mOhm Rds(on), 175°C Tj — are identical to the non-automotive IRFS4410Z. In a BOM that already specifies the IRFS4410Z, the AUIRFS4410Z is a pin-compatible drop-in with the added AEC-Q101 automotive qualification."},{"question":"What is the maximum junction temperature of AUIRFS4410Z?","answer":"The operating junction temperature range is -55°C to 175°C. The 175°C ceiling allows the part to be used in under-hood automotive and high-ambient industrial environments where a 150°C-rated FET would require significant derating."},{"question":"Can AUIRFS4410Z be used for 48V battery systems?","answer":"Yes. The 100 V drain-source rating provides 2× margin above a nominal 48 V rail (which peaks at 54 V during charging). The 97 A switching current and 9 mOhm Rds(on) keep conduction losses low in a battery disconnect or a BMS load switch."},{"question":"Is AUIRFS4410Z RoHS compliant and lead-free?","answer":"The AUIRFS4410Z is listed as an automotive HEXFET. Infineon's standard automotive D2PAK parts are RoHS-compliant and lead-free (with matte-tin plating on the leads). The RoHS status is confirmed at quote time per the date-code-specific batch."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRFS4410Z","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRFS4410Z when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}