{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRFS4310ZTRL","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRFS4310ZTRL","canonicalUrl":"https://icboms.com/infineon/AUIRFS4310ZTRL","factsUrl":"https://icboms.com/api/mcp/products/AUIRFS4310ZTRL","rawCanonicalId":null},"summary":{"shortDescription":"Infineon AUIRFS4310ZTRL, N-channel HEXFET power MOSFET, 100 V Vds, 120 A Id, 6 mOhm Rds(on) max at 75 A, 170 nC gate charge, D2PAK (TO-263) surface mount, -55 to 175 °C junction.","salesMarkdown":"## 100 V, 6 mOhm — the conduction loss number The AUIRFS4310ZTRL is an Infineon N-channel HEXFET power MOSFET rated for 100 V drain-source and 120 A continuous drain current. Total gate charge is 170 nC at 10 V. A 100 kHz switching frequency demands 17 mA average from the gate driver just to charge and discharge the gate — the driver must be sized for peak current well above that to avoid miller-plateau slowdown. The ±20 V maximum gate-source rating gives headroom for driving the gate above the 10 V test point to further reduce on-resistance in high-current pulses. ## 175 °C junction — where it goes That 175 °C ceiling is the threshold for under-hood automotive or industrial environments where ambient air hits 105 °C and the self-heating from 120 A pulses pushes the die temperature past what a 150 °C-rated part could survive. The D2PAK (TO-263) surface-mount package with an exposed drain tab needs a copper pour on the PCB to pull heat out — the thermal resistance to ambient depends on the board area, not just the package. ## Lifecycle and compliance Listed as Active by Infineon — no end-of-life notice or last-time-buy clock is running. RoHS compliance is standard for the AUIRFS4310ZTRL suffix.","metaTitle":"AUIRFS4310ZTRL N-Channel MOSFET, 100 V, 6 mOhm, D2PAK","metaDescription":"Infineon AUIRFS4310ZTRL N-channel HEXFET MOSFET, 100 V, 120 A, 6 mOhm Rds(on) at 75 A, 170 nC gate charge, 175 °C Tj. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","has_mpn":"AUIRFS4310","power_w":"250.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0069","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"100.0","Vgs(Th) (Max) @ Id":"4 V @ 150µA","switching_current_a":"120.0","Rds On (Max) @ Id, Vgs":"6mOhm @ 75 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"170 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.17","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/4d6d4b49fed5ee1d118c82fc0848e379.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of AUIRFS4310ZTRL?","answer":"Maximum Rds(on) is 6 mOhm at 75 A drain current with a 10 V gate-source voltage. This is the on-resistance at the test point; actual on-resistance increases with junction temperature per the normalised curve in the datasheet."},{"question":"What is the gate charge of AUIRFS4310ZTRL?","answer":"Total gate charge is 170 nC at a 10 V gate drive. This figure drives the gate-driver current requirement for the target switching frequency."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRFS4310ZTRL","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRFS4310ZTRL when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}