{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRFS3206","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRFS3206","canonicalUrl":"https://icboms.com/infineon/AUIRFS3206","factsUrl":"https://icboms.com/api/mcp/products/AUIRFS3206","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® AUIRFS3206 automotive N-channel power MOSFET, 60 V, 120 A, 3 mOhm Rds(on), D2PAK, surface mount.","salesMarkdown":"## Package and thermal environment The AUIRFS3206: Surface-mount D2PAK package — the drain tab is the primary heat path. The junction temperature range is -55 to 175 deg C, so the part can operate in engine-bay or under-hood ambient without derating below 150 deg C case temperature. Gate-source voltage is limited to ±20 V absolute maximum — the gate oxide thickness sets this ceiling; a gate-drive rail above 15 V needs a series resistor or zener clamp to prevent oxide rupture.","metaTitle":"AUIRFS3206 N-Channel MOSFET, 60 V, 120 A, 3 mOhm","metaDescription":"AUIRFS3206 automotive N-channel HEXFET power MOSFET, 60 V, 120 A, 3 mOhm Rds(on). Active production. Quoted to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"300.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0065","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"60.0","Vgs(Th) (Max) @ Id":"4 V @ 150µA","switching_current_a":"120.0","Rds On (Max) @ Id, Vgs":"3mOhm @ 75 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"170 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.06","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/571c6692be235df013f05b1f8570948d.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/AUIRFS3206/alternatives.json"},"ai":{"faq":[{"question":"What is the AUIRFS3206's gate threshold voltage?","answer":"Maximum gate-source threshold voltage is 4 V at 150 µA drain current."},{"question":"What compliance documentation is available for the AUIRFS3206?","answer":"The part is designated as an automotive power MOSFET and is produced under Infineon's automotive quality management system. RoHS compliance is standard for the HEXFET series; specific certificates and PPAP documentation are available on request through the RFQ process."},{"question":"Is the AUIRFS3206 pin-compatible with other HEXFET parts?","answer":"The AUIRFS3206 uses the standard D2PAK footprint."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRFS3206","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRFS3206 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}