{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRFR8405TRL","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRFR8405TRL","canonicalUrl":"https://icboms.com/infineon/AUIRFR8405TRL","factsUrl":"https://icboms.com/api/mcp/products/AUIRFR8405TRL","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET series AUIRFR8405TRL, N-Channel MOSFET, 40 V Vds, 100 A Id, 1.98 mOhm Rds(on) max at 90 A, 10 V, DPAK (TO-252) surface mount, -55 to 175 °C junction.","salesMarkdown":"## 40 V, 100 A, 1.98 mOhm — what this FET delivers That on-resistance number is the one that matters for conduction loss — at 90 A the voltage drop stays under 180 mV, which keeps the DPAK package from cooking in a tight layout. ## Gate charge and switching — what 155 nC means for your driver Total gate charge is 155 nC at 10 V. That is a medium-to-high Qg for a 40 V FET — plan for a gate driver that can source at least 1.5 A peak to hit a 100 ns rise time. If you are running PWM above 50 kHz, the driver's average current demand will be a few tens of milliamps; below that, the 155 nC figure is not a constraint. ## Junction temperature range — -55 to 175 °C The 175 °C max junction gives headroom for transient overloads, but the Rds(on) roughly doubles from 25 °C to 175 °C — factor that into your thermal model.","metaTitle":"AUIRFR8405TRL MOSFET, 40 V, 100 A, 1.98 mOhm, DPAK","metaDescription":"Infineon AUIRFR8405TRL N-channel HEXFET, 40 V, 100 A, 1.98 mOhm Rds(on) at 10 V. Active production, DPAK package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"163.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0052","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"40.0","Vgs(Th) (Max) @ Id":"3.9 V @ 100µA","switching_current_a":"100.0","Rds On (Max) @ Id, Vgs":"1.98mOhm @ 90 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"155 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.40","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/65d58a5f4408c4c86f5bf94fc83a674c.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the gate charge of AUIRFR8405TRL?","answer":"Maximum total gate charge (Qg) is 155 nC at Vgs = 10 V."},{"question":"What is the Rds(on) of AUIRFR8405TRL?","answer":"Maximum Rds(on) is 1.98 mOhm at Id = 90 A and Vgs = 10 V."},{"question":"Is AUIRFR8405TRL a direct replacement for IRFR8405?","answer":"No official cross-reference or second-source record is available for IRFR8405. The AUIRFR8405TRL is an Infineon part; verify pin-compatibility and parametric overlap from the respective datasheets before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRFR8405TRL","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRFR8405TRL when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}