{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRFR8405","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRFR8405","canonicalUrl":"https://icboms.com/infineon/AUIRFR8405","factsUrl":"https://icboms.com/api/mcp/products/AUIRFR8405","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® AUIRFR8405, N-Channel MOSFET, 40 V, 100 A, 1.98 mOhm Rds(on) at 90 A, 10 V, DPAK (TO-252), -55°C to 175°C junction.","salesMarkdown":"## 40 V, 100 A N-channel — the conduction-loss floor The Infineon AUIRFR8405 is a 40 V, 100 A N-channel MOSFET from the HEXFET® family, housed in a DPAK (TO-252) surface-mount package. ## 175°C junction — where it lives The 175°C ceiling means the die can sustain high-current pulses without immediate thermal shutdown, but the DPAK's copper-pad area on the PCB sets the actual RthJA — a 1-inch² pad on a 2-oz copper pour is typical for keeping the junction below 150°C at 100 A continuous. ## Gate charge and switching speed Total gate charge is 155 nC at 10 V. For a 100 kHz switching frequency, the gate driver must supply 15.5 mA average current; a 60 nC gate at the same frequency draws only 6 mA, so the AUIRFR8405 demands a stronger driver stage. The ±20 V Vgs max gives headroom for gate-drive overshoot in hard-switched topologies.","metaTitle":"AUIRFR8405 MOSFET N-CH 40V 100A DPAK, 1.98 mOhm Rds(on)","metaDescription":"AUIRFR8405 N-channel HEXFET MOSFET, 40 V, 100 A, 1.98 mOhm Rds(on) at 90 A, DPAK. Active production. Available to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"163.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0052","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"40.0","Vgs(Th) (Max) @ Id":"3.9 V @ 100µA","switching_current_a":"100.0","Rds On (Max) @ Id, Vgs":"1.98mOhm @ 90 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"155 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.08","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/65d58a5f4408c4c86f5bf94fc83a674c.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRFR8405","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRFR8405 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}