{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRFR5505TRL","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRFR5505TRL","canonicalUrl":"https://icboms.com/infineon/AUIRFR5505TRL","factsUrl":"https://icboms.com/api/mcp/products/AUIRFR5505TRL","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® P-Channel MOSFET, AUIRFR5505TRL, 55 V, 18 A, 110 mOhm, DPAK surface-mount, -55 to 150 °C.","salesMarkdown":"## What the DPAK package and P-channel polarity mean on the bench The AUIRFR5505TRL: The DPAK footprint is a common power-semiconductor package that demands a copper pad on the PCB for thermal dissipation — the 57 W power rating assumes that pad is present and sized per the datasheet layout. P-channel means the load connects between drain and ground, and the gate is pulled low to turn the FET on — useful for high-side switching where you want to avoid a charge-pump gate driver. ## On-resistance and the switching current that matters The maximum on-resistance is 110 mOhm at Vgs = -10 V and Id = 9.6 A — that is the operating point the datasheet guarantees, not the 18 A peak. At 18 A the die will be dissipating well over 35 W even at the Rds(on) floor, so the 57 W package limit means the duty cycle and heatsinking must be checked against the actual load current. Gate charge is 32 nC at Vgs = -10 V — a typical gate driver with 1 A peak output can switch this FET in under 50 ns, but the total switching loss depends on the gate-drive loop inductance as much as the Qg. ## Temperature range and where this part survives Junction temperature range is -55 °C to 150 °C, which covers automotive under-hood and industrial motor-drive environments — the threshold voltage shifts with temperature, so the 4 V max at 250 µA is the cold-start worst case. The gate-source voltage is limited to ±20 V absolute maximum — a gate driver with a 12 V supply is safe, but any ringing above that on the gate node will punch through the oxide.","metaTitle":"AUIRFR5505TRL P-Channel MOSFET, 55V 18A DPAK","metaDescription":"AUIRFR5505TRL P-Channel HEXFET MOSFET, 55V, 18A, 110mOhm Rds(on), DPAK surface-mount. Active production, sourced per RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"57.0","Fet Type":"P-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0006","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"55.0","Vgs(Th) (Max) @ Id":"4 V @ 250µA","switching_current_a":"18.0","Rds On (Max) @ Id, Vgs":"110mOhm @ 9.6 A, 10 V","Operating Temperature High":"-55°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"32 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.79","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/74cd527c6363e3c1f947fd8e86145090.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRFR5505TRL","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRFR5505TRL when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}