{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRFR5410-IR","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRFR5410-IR","canonicalUrl":"https://icboms.com/infineon/AUIRFR5410-IR","factsUrl":"https://icboms.com/api/mcp/products/AUIRFR5410-IR","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® series, Automotive P-Channel MOSFET, AUIRFR5410-IR, 100 V, 13 A, 205 mOhm, DPAK (TO-252AA), Surface Mount, Bulk.","salesMarkdown":"## P-Channel 100 V MOSFET in the DPAK footprint The AUIRFR5410-IR is an automotive-grade P-Channel enhancement-mode MOSFET from the HEXFET® series, rated for 100 V drain-source breakdown and 13 A continuous switching current. Packaged in the DPAK (TO-252AA) surface-mount outline, the part suits automated reflow assembly on standard FR-4 boards. The bulk packaging option means it ships in tubes or trays rather than tape-and-reel — confirm the feeder compatibility if your line expects reeled parts. ## Gate drive and switching parameters for the BOM Gate threshold voltage is specified at 4 V maximum with 250 µA drain current — a logic-level gate drive at 5 V will barely turn the device on; plan for a 10 V gate rail to achieve the rated Rds(on). Maximum gate-source voltage is ±20 V, so the driver output should be clamped or the supply rail kept below that limit to avoid oxide rupture. The 66 W power dissipation ceiling assumes the DPAK is soldered to a reasonable copper area on the PCB — a layout with minimal drain pad copper will derate that figure significantly. The 800 pF (0.0008 µF) input capacitance is a figure from the datasheet's typical curve — it influences the switching speed and the driver's peak current requirement.","metaTitle":"AUIRFR5410-IR P-Channel HEXFET, 100V, 13A, DPAK","metaDescription":"AUIRFR5410-IR automotive P-Channel HEXFET MOSFET, 100V, 13A switching, 205mOhm Rds(on), active production, DPAK surface mount. Request quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"66.0","Fet Type":"P-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0008","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"100.0","Vgs(Th) (Max) @ Id":"4 V @ 250µA","switching_current_a":"13.0","Rds On (Max) @ Id, Vgs":"205mOhm @ 7.8 A, 10 V","Operating Temperature High":"-55°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"58 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.71","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/36499deaa02dce1f4b38b0c3dc4f63c9.pdf","sourceUrl":null},"ai":{"faq":[{"question":"How do I get current pricing and availability for AUIRFR5410-IR?","answer":"Submit an RFQ against your target quantity. We source through independent distribution and confirm availability and current market pricing at quote time. No stock or price figures are published here."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRFR5410-IR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRFR5410-IR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}