{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRFR5305TRL","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRFR5305TRL","canonicalUrl":"https://icboms.com/infineon/AUIRFR5305TRL","factsUrl":"https://icboms.com/api/mcp/products/AUIRFR5305TRL","rawCanonicalId":null},"summary":{"shortDescription":"Infineon AUIRFR5305TRL, Automotive AEC-Q101 HEXFET® series, P-Channel MOSFET, 55V Vdss, 31A Id, 65mOhm Rds(on) at 10V gate drive, TO-252-3 (DPak) surface mount, -55°C to 175°C junction temperature.","salesMarkdown":"## P-Channel high-side switch for 12V/24V automotive loads The Infineon AUIRFR5305TRL is a P-Channel enhancement-mode MOSFET from the Automotive HEXFET® series, qualified to AEC-Q101 for stress reliability. It is designed for high-side switching in automotive and industrial applications where a positive supply rail must be switched without a charge-pump or bootstrap circuit — a P-Channel simplifies the gate drive by referencing to ground. The 55V drain-source rating (Vdss) provides headroom for 12V and 24V systems with load-dump transients, while the 31A continuous drain current (Id) at 25°C case temperature covers motor, solenoid, and DC-DC converter loads. The 65 mOhm maximum on-resistance at 16A, 10V gate drive keeps conduction losses manageable in a DPAK footprint. ## Gate drive and switching performance The gate threshold voltage (Vgs(th)) is 4V maximum at 250 µA drain current, meaning the device is fully off below that threshold and requires a gate drive of 10V to achieve the rated 65 mOhm Rds(on). The maximum gate-source voltage rating is ±20V, so the gate driver must not exceed that absolute maximum — a 12V gate drive is well within the window. The total gate charge (Qg) is 63 nC at 10V, which translates to moderate switching losses at frequencies up to a few tens of kHz; for higher-frequency PWM, the input capacitance of 1200 pF at 25V Vds should be factored into the gate-driver sizing. ## Temperature range and thermal management The maximum power dissipation is 110W at case temperature (Tc), but that figure assumes an ideal heatsink; in a real DPAK layout on a standard FR4 board, derating is significant. For a 31A continuous load, the case must be kept below 175°C, which typically requires a copper area on the PCB or an external heatsink. The 175°C TJ max is the absolute limit — nominal operation should stay well below that to avoid accelerated aging. The AUIRFR5305TRL is supplied in a TO-252-3 (DPak) surface-mount package, also known as SC-63, with the supplier device code PG-TO252-3. Cut Tape (CT) quantities are also available for prototyping or low-volume builds.","metaTitle":"AUIRFR5305TRL P-Channel MOSFET, 55V 31A, AEC-Q101, DPAK","metaDescription":"Infineon AUIRFR5305TRL P-Channel HEXFET MOSFET, 55V drain-source, 31A continuous drain, 65 mOhm Rds(on), AEC-Q101 qualified, -55 to 175°C.","metaKeywords":null},"attributes":{"series":"Automotive, AEC-Q101, HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"Automotive, AEC-Q101, HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"P-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"65mOhm @ 16A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"PG-TO252-3","Gate Charge (Qg) (Max) @ Vgs":"63 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"1200 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"31A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.46","priceTiers":[{"qty":1,"price":"$3.46000","currency":"USD"},{"qty":10,"price":"$3.11000","currency":"USD"},{"qty":100,"price":"$2.50000","currency":"USD"},{"qty":500,"price":"$2.05400","currency":"USD"},{"qty":1000,"price":"$1.71168","currency":"USD"},{"qty":3000,"price":"$1.51850","currency":"USD"},{"qty":6000,"price":"$1.46715","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ab3f55f7da7eb38f5f25cb15f003fbd9.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/AUIRFR5305TRL/alternatives.json"},"ai":{"faq":[{"question":"Is AUIRFR5305TRL equivalent to IRFR5305?","answer":"IRFR5305 is a functional equivalent from the same HEXFET family, but it is not AEC-Q101 qualified. The AUIRFR5305TRL is the automotive-grade variant with the full -55°C to 175°C junction temperature range. For non-automotive designs, IRFR5305 may be a cost-effective alternative, but verify the temperature grade and reliability requirements before substituting."},{"question":"What is the maximum drain current of AUIRFR5305TRL?","answer":"The maximum continuous drain current (Id) is 31A at 25°C case temperature. At higher case temperatures, the current must be derated per the thermal derating curve. The 31A rating assumes the case is held at 25°C — in practice, derate for the actual operating ambient and heatsinking."},{"question":"Is AUIRFR5305TRL RoHS compliant?","answer":"Yes, the AUIRFR5305TRL is ROHS3 compliant, meeting the current EU RoHS directive for restriction of hazardous substances."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRFR5305TRL","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRFR5305TRL when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}