{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRFR120Z","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRFR120Z","canonicalUrl":"https://icboms.com/infineon/AUIRFR120Z","factsUrl":"https://icboms.com/api/mcp/products/AUIRFR120Z","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® N-Channel MOSFET, AUIRFR120Z, 100V Vds, 8.7A Id, 190mOhm Rds(on) at 10V, DPAK (TO-252) surface mount, -55°C to 175°C junction.","salesMarkdown":"## HEXFET N-channel in a DPAK — 100 V, 8.7 A switching The Infineon AUIRFR120Z is a 100 V, 8.7 A N-channel HEXFET MOSFET in the DPAK (TO-252) surface-mount package. It is designed for high-efficiency power switching in applications such as DC-DC converters, motor drives, and load switches where board space is tight. This gives a conduction loss of about 1.0 W at 5.2 A — well within the 35 W package power dissipation limit when the junction stays under 175°C. Total gate charge is 10 nC at 10 V, so a gate driver delivering 1 A can switch this FET in roughly 10 ns. The low Qg keeps gate-drive losses small even at switching frequencies above 100 kHz. ## Temperature range and ruggedness The 4 V maximum threshold voltage at 25 µA ensures the device turns on cleanly with 5 V logic-level gate drives.","metaTitle":"Infineon AUIRFR120Z N-Channel HEXFET, 100V 8.7A, 190mOhm","metaDescription":"Infineon AUIRFR120Z N-channel HEXFET MOSFET, 100V, 8.7A, 190mOhm Rds(on) at 10V. Active lifecycle, surface-mount DPAK.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"35.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0003","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"100.0","Vgs(Th) (Max) @ Id":"4 V @ 25µA","switching_current_a":"8.7","Rds On (Max) @ Id, Vgs":"190mOhm @ 5.2 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"10 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.48","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/abcc626acf85cacfed45fe8387d46f9e.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is AUIRFR120Z a direct replacement for IRFR120Z?","answer":"The AUIRFR120Z is the Infineon (formerly International Rectifier) version of the same HEXFET die in the DPAK package. It is pin-compatible and electrically equivalent to the IRFR120Z — same 100 V, 8.7 A, 190 mOhm ratings. It can serve as a drop-in replacement for the IRFR120Z in most designs."},{"question":"What is the maximum Rds(on) of AUIRFR120Z?","answer":"This value is the worst-case over the full temperature range."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRFR120Z","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRFR120Z when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}