{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRFP4409","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRFP4409","canonicalUrl":"https://icboms.com/infineon/AUIRFP4409","factsUrl":"https://icboms.com/api/mcp/products/AUIRFP4409","rawCanonicalId":null},"summary":{"shortDescription":"International Rectifier AUIRFP4409 HEXFET N-Channel MOSFET, 300 V, 38 A, 69 mOhm Rds(on), TO-247AC through-hole, bulk.","salesMarkdown":"## 300 V, 38 A N-Channel HEXFET in TO-247AC The AUIRFP4409: Maximum on-resistance is 69 mOhm at Vgs = 10 V and Id = 24 A, a figure that defines conduction losses in high-current switching stages. Total gate charge at Vgs = 10 V is 125 nC, setting the drive current needed from the gate driver for a given switching frequency — a 125 nC gate at 100 kHz draws 12.5 mA average from the driver. ## Thermal and voltage margins for the BOM Maximum gate-source voltage is ±20 V — exceeding this during fast switching transients can rupture the gate oxide; a gate clamp or zener across Vgs is standard practice in noisy layouts. ## Active production — sourcing posture Sourced through authorized and independent distribution channels; lead time and per-unit pricing are confirmed at RFQ against the BOM quantity.","metaTitle":"AUIRFP4409 N-Channel MOSFET, 300V 38A TO-247AC","metaDescription":"AUIRFP4409 N-Channel HEXFET MOSFET, 300V, 38A, 69mOhm Rds(on). Active production. TO-247AC through-hole. Quoted to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"341.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","capacitance_uf":"0.0052","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"300.0","Vgs(Th) (Max) @ Id":"5 V @ 250µA","switching_current_a":"38.0","Rds On (Max) @ Id, Vgs":"69mOhm @ 24 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"125 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.88","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/0e4491f13c16f15a3194407324a3a0e5.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is AUIRFP4409's listed Vgs (±20 V) on this component line?","answer":"The maximum gate-source voltage rating is ±20 V. Exceeding this during fast switching transients can damage the gate oxide."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRFP4409","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRFP4409 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}