{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRFP1405","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRFP1405","canonicalUrl":"https://icboms.com/infineon/AUIRFP1405","factsUrl":"https://icboms.com/api/mcp/products/AUIRFP1405","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® N-Channel MOSFET, AUIRFP1405, 55 V, 95 A switching current, 5.3 mOhm Rds(on), TO-247, Through Hole, Bulk.","salesMarkdown":"## What the 5.3 mOhm Rds(on) means at the bench The AUIRFP1405 is an N-channel HEXFET MOSFET in a TO-247 through-hole package, rated for 55 V drain-source and 95 A switching current. The headline figure is the 5.3 mOhm maximum on-resistance at 95 A with 10 V gate drive — that is the conduction loss you pay for in heat every cycle. At full rated current, the dissipation in the channel alone is about 48 W before you account for switching losses, so the 310 W package power rating gives you breathing room for a hard-switched inverter leg. The ±20 V absolute maximum gate-source rating gives margin for ringing on long gate traces, but a 15 V zener clamp across the gate-source is cheap insurance in a noisy environment. ## Temperature grade and where it fits The junction temperature range is -55°C to 175°C, which is the full automotive-grade band. This part carries the AUTOMOTIVE HEXFET designation — it is qualified for the under-hood thermal cycle and vibration profile. The TO-247 package with through-hole mounting handles the mechanical stress of engine-bay duty better than a surface-mount D²PAK in many cases, and the large backside tab makes heatsinking straightforward with a single M3 screw and thermal compound.","metaTitle":"AUIRFP1405 N-Channel MOSFET, 55V, 95A, HEXFET, TO-247","metaDescription":"AUIRFP1405 N-channel HEXFET MOSFET, 55V, 95A switching current, 5.3mOhm Rds(on). Active production. Sourced to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"310.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","capacitance_uf":"0.0056","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"55.0","Vgs(Th) (Max) @ Id":"4 V @ 250µA","switching_current_a":"95.0","Rds On (Max) @ Id, Vgs":"5.3mOhm @ 95 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"180 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.38","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[{"question":"What gate voltage should I use to achieve the rated Rds(on)?","answer":"The 5.3 mOhm Rds(on) is specified at Vgs = 10 V with 95 A drain current. A 12 V or 15 V gate drive rail is recommended to ensure the MOSFET is fully enhanced and stays in the low-resistance region across the operating temperature range."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRFP1405","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRFP1405 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}