{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRFP064N","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRFP064N","canonicalUrl":"https://icboms.com/infineon/AUIRFP064N","factsUrl":"https://icboms.com/api/mcp/products/AUIRFP064N","rawCanonicalId":null},"summary":{"shortDescription":"Infineon (International Rectifier) HEXFET® N-Channel MOSFET, AUIRFP064N, 55 V, 110 A, 8 mOhm Rds(on), 200 W, TO-247, Through Hole, Bulk.","salesMarkdown":"## 55 V, 110 A, 8 mOhm — the switching decision The AUIRFP064N: This is an N-channel HEXFET rated for 55 V drain-source and 110 A switching current. The 8 mOhm maximum Rds(on) at 59 A and 10 V gate drive means conduction losses stay low even at high current — the on-resistance figure is what governs the thermal rise in a continuous-duty switching application like a motor drive or DC-DC converter. Gate charge is 170 nC at 10 V. That tells the drive circuit designer how much current the gate driver must source to hit the target switching frequency — a 170 nC gate at 50 kHz draws about 8.5 mA from the driver, well within a standard totem-pole driver's capability. ## Junction temperature range and package The part can sit in an engine bay or an outdoor enclosure without derating the junction temperature below the datasheet ceiling. Through-hole mounting in a TO-247 package. The bulk package means it ships in tubes or trays, not tape-and-reel — a factor for pick-and-place throughput if the line expects reel-fed parts. 200 W power dissipation is the thermal budget at case temperature 25°C. In practice, the actual dissipation is limited by the heatsink and airflow — the junction-to-case thermal resistance is the number to size the heatsink against. ## Gate drive limits and threshold Maximum gate-source voltage is ±20 V. The ±20 V rating gives margin above the typical 12 V drive rail.","metaTitle":"AUIRFP064N N-Channel MOSFET, 55V, 110A, TO-247","metaDescription":"AUIRFP064N HEXFET N-channel MOSFET, 55V, 110A, 8 mOhm Rds(on), 200W. Active production. Sourced to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"200.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","capacitance_uf":"0.004","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"55.0","Vgs(Th) (Max) @ Id":"4 V @ 250µA","switching_current_a":"110.0","Rds On (Max) @ Id, Vgs":"8mOhm @ 59 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"170 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.22","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/3f2b1b9804f0f9bb8da173cec56239f3.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of AUIRFP064N and at what gate voltage?","answer":"That is the on-resistance figure to use for conduction loss calculations in a switching application."},{"question":"What is the gate charge of AUIRFP064N?","answer":"Total gate charge is 170 nC at 10 V. This determines the gate driver current needed for the target switching frequency."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRFP064N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRFP064N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}