{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRFB4610","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRFB4610","canonicalUrl":"https://icboms.com/infineon/AUIRFB4610","factsUrl":"https://icboms.com/api/mcp/products/AUIRFB4610","rawCanonicalId":null},"summary":{"shortDescription":"Infineon (International Rectifier) HEXFET N-Channel MOSFET, AUIRFB4610, 100V Vds, 73A switching current, 14mOhm Rds(on), TO-220 through-hole package, -55°C to 175°C junction temperature.","salesMarkdown":"## Device identity and key parametrics The AUIRFB4610 is an automotive-grade N-channel HEXFET MOSFET in a through-hole TO-220 package, rated for 100V drain-source breakdown and 73A continuous switching current. On-resistance is 14mOhm maximum at 44A drain current with 10V gate drive — this is the conduction loss figure for a motor-drive or battery-charger output stage at full load. Junction temperature range spans -55°C to 175°C, covering the full automotive under-hood and engine-bay thermal profile with margin above the 150°C typical ambient limit. Maximum gate-source voltage is ±20V, giving headroom above the 12V or 15V gate drive rails common in automotive power stages — oxide stress from overshoot on a 48V mild-hybrid bus stays within the abs-max window. Power dissipation is rated 190W — this is the package-limited figure at 25°C case temperature; actual usable power drops with the junction-to-case thermal resistance and the ambient derating.","metaTitle":"AUIRFB4610 N-Channel MOSFET, 100V, 73A, HEXFET, TO-220","metaDescription":"AUIRFB4610 automotive N-channel HEXFET MOSFET, 100V Vds, 73A switching current, 14mOhm Rds(on), -55°C to 175°C junction, active production, TO-220 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"190.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","capacitance_uf":"0.0035","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"100.0","Vgs(Th) (Max) @ Id":"4 V @ 100µA","switching_current_a":"73.0","Rds On (Max) @ Id, Vgs":"14mOhm @ 44 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"140 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.54","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/f1026d18c1ef8f1f03f4c7457052cb25.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is AUIRFB4610's listed Vgs rating?","answer":"Maximum gate-source voltage is ±20V, which provides margin above standard 12V and 15V gate drive rails in automotive power stages."},{"question":"What series does the AUIRFB4610 belong to?","answer":"It is part of the HEXFET series, Infineon's (formerly International Rectifier) trench-gate MOSFET family optimized for low on-resistance and fast switching."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRFB4610","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRFB4610 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}