{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRF8739L2TR","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRF8739L2TR","canonicalUrl":"https://icboms.com/infineon/AUIRF8739L2TR","factsUrl":"https://icboms.com/api/mcp/products/AUIRF8739L2TR","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® series, AUIRF8739L2TR, N-Channel MOSFET, 40 V Vdss, 545 A (Tc) continuous drain, 0.6 mOhm Rds(on) at 10 V, DirectFET™ Isometric L8 package, -55 to 175 °C.","salesMarkdown":"It handles a 40 V drain-to-source voltage and delivers a continuous drain current of 57 A at ambient temperature, or 545 A when the case is held at 25 °C. The on-resistance sits at 0.6 mOhm typical with a 10 V gate drive. The DirectFET™ Isometric L8 package is a surface-mount can with a low-inductance, low-thermal-resistance footprint. ## Ratings that drive the BOM decision The 0.6 mOhm Rds(on) at 10 V gate drive keeps conduction losses low at high current. The 562 nC gate charge and 17890 pF input capacitance at 25 V drain set the gate-drive requirement.","metaTitle":"AUIRF8739L2TR MOSFET N-CH 40V 57A DirectFET, 0.6 mOhm","metaDescription":"Infineon AUIRF8739L2TR N-channel MOSFET, 40V Vdss, 545A continuous drain at Tc, 0.6 mOhm Rds(on). Active, ROHS3. Sourced to order against RFQ.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"40V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"DirectFET™ Isometric L8","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.9V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"0.6mOhm @ 195A, 10V","Power Dissipation (Max)":"3.8W (Ta), 340W (Tc)","Supplier Device Package":"DirectFET™ Isometric L8","Gate Charge (Qg) (Max) @ Vgs":"562 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"17890 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"57A (Ta), 545A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$7.42","priceTiers":[{"qty":1,"price":"$7.42000","currency":"USD"},{"qty":10,"price":"$6.36300","currency":"USD"},{"qty":100,"price":"$5.30260","currency":"USD"},{"qty":500,"price":"$4.67878","currency":"USD"},{"qty":1000,"price":"$4.21090","currency":"USD"},{"qty":2000,"price":"$3.94577","currency":"USD"},{"qty":4000,"price":"$3.94577","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/a180e60d4960c42df4acf70eef34a9f5.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/AUIRF8739L2TR/alternatives.json"},"ai":{"faq":[{"question":"What replaces AUIRF8739L2TR or is there an equivalent?","answer":"No official replacement or second-source is listed for this part. The IPD50R950CEAUMA1 is a 500 V, 950 mOhm CoolMOS™ device — it is not a functional equivalent for a 40 V, 0.6 mOhm FET."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRF8739L2TR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRF8739L2TR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}