{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRF7734M2TR","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRF7734M2TR","canonicalUrl":"https://icboms.com/infineon/AUIRF7734M2TR","factsUrl":"https://icboms.com/api/mcp/products/AUIRF7734M2TR","rawCanonicalId":null},"summary":{"shortDescription":"Infineon AUIRF7734M2TR, N-Channel HEXFET Power MOSFET, 40 V, 17 A, 4.9 mOhm, DIRECTFET M2, Surface Mount, Bulk.","salesMarkdown":"## 40 V N-channel in the DIRECTFET M2 can The AUIRF7734M2TR: The DIRECTFET M2 package is a surface-mount can with a solderable top-side source clip and bottom-side drain pad — the dual-sided thermal path pulls heat into the PCB copper plane and, with the right layout, into an external heatsink on the top. The 2.5 W power dissipation figure is the package-limited rating; actual capability depends on the board's thermal stack-up and airflow. ## Gate drive and switching parametrics Gate-source voltage is rated ±20 V, giving margin for a 10 V or 12 V gate drive rail. The typical gate charge is 72 nC at 10 V — a gate driver delivering 2 A peak can switch the FET in under 40 ns, which matters for hard-switching topologies where crossover losses scale with transition time. The 0.0025 µF (2.5 nF) input capacitance is the sum of Ciss at the test condition; it sets the gate-drive power budget. At 500 kHz switching frequency, the gate-drive loss is roughly Qg × Vgs × fsw, or about 0.36 W — within the driver's thermal budget but worth derating if the ambient exceeds 85 °C. Threshold voltage is 4 V maximum at 100 µA drain current. The 175 °C Tj(max) is the silicon limit; the package and solder joint reliability at that temperature depend on the PCB material (high-Tg FR-4 or polyimide) and the thermal cycling profile.","metaTitle":"AUIRF7734M2TR MOSFET N-CH 40V 17A DIRECTFET M2","metaDescription":"AUIRF7734M2TR N-channel HEXFET power MOSFET, 40V, 17A, 4.9mOhm Rds(on), DIRECTFET M2 package. Active production, sourced to order. Request a quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"2.5","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0025","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"40.0","Vgs(Th) (Max) @ Id":"4 V @ 100µA","switching_current_a":"17.0","Rds On (Max) @ Id, Vgs":"4.9mOhm @ 43 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"72 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.94","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/59f8e3a27abaa135a5209b30de601ce1.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of the AUIRF7734M2TR at 10 V gate drive?","answer":"This is the worst-case figure at 25 °C junction temperature; the typical value is lower, and Rds(on) increases with junction temperature per the normalized curve in the datasheet."},{"question":"What is the gate charge of the AUIRF7734M2TR?","answer":"The total gate charge is 72 nC at 10 V gate-source voltage. This figure determines the gate-drive current required at a given switching frequency; for example, at 500 kHz the average gate-drive current is 36 mA."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRF7734M2TR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRF7734M2TR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}