{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRF3805L","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRF3805L","canonicalUrl":"https://icboms.com/infineon/AUIRF3805L","factsUrl":"https://icboms.com/api/mcp/products/AUIRF3805L","rawCanonicalId":null},"summary":{"shortDescription":"Infineon AUIRF3805L, N-Channel HEXFET Power MOSFET, 55 V, 160 A, 3.3 mOhm Rds(on) at 75 A, TO-262 (TO-262-3) through-hole package, -55°C to 175°C junction temperature.","salesMarkdown":"## 55 V, 160 A — a high-current switching MOSFET This is an N-channel HEXFET power MOSFET rated for 55 V drain-source breakdown (Vds) and 160 A continuous drain current (Id). Gate charge is 290 nC maximum at Vgs=10 V, which means the gate driver must supply about 290 nC per switching cycle. At a 100 kHz switching frequency, the average gate-drive current works out to roughly 29 mA — well within the capability of most dedicated MOSFET drivers, but the driver's peak current rating should be checked against the gate charge profile. The maximum gate-source voltage is ±20 V, so a standard 10 V or 12 V gate drive is safe, but a 15 V rail is still within the absolute maximum. A gate resistor in the 10-ohm range is typical to damp ringing on the gate node. ## 175°C junction — rated for harsh environments The 300 W power dissipation (at Tc=25°C) gives thermal headroom in a properly heatsinked design. ## TO-262 through-hole — a rugged package for high current Housed in a TO-262 (TO-262-3) through-hole package, the AUIRF3805L suits designs where vibration resistance and mechanical strength are priorities. The through-hole mounting allows a large copper tab for heatsink attachment, which is essential for dissipating the 300 W maximum power.","metaTitle":"AUIRF3805L N-Channel MOSFET, 55V 160A, TO-262, HEXFET","metaDescription":"AUIRF3805L N-channel HEXFET MOSFET: 55 V drain-source, 160 A continuous, 3.3 mOhm Rds(on) at 75 A, 290 nC gate charge. Active production, TO-262 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"300.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","capacitance_uf":"0.008","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"55.0","Vgs(Th) (Max) @ Id":"4 V @ 250µA","switching_current_a":"160.0","Rds On (Max) @ Id, Vgs":"3.3mOhm @ 75 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"290 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.97","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/3b15ef59e8ae1aef0d4a562af55f4dc0.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of AUIRF3805L?","answer":"The maximum Rds(on) is 3.3 mOhm at Id=75 A and Vgs=10 V."},{"question":"What is the gate charge of AUIRF3805L?","answer":"The maximum total gate charge (Qg) is 290 nC at Vgs=10 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRF3805L","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRF3805L when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}