{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRF3710ZSTRR","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRF3710ZSTRR","canonicalUrl":"https://icboms.com/infineon/AUIRF3710ZSTRR","factsUrl":"https://icboms.com/api/mcp/products/AUIRF3710ZSTRR","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® series, N-Channel MOSFET, 100 V, 59 A, 18 mOhm Rds(on) at 35 A, 10 V, 120 nC gate charge, D2PAK surface mount, active lifecycle.","salesMarkdown":"## 100 V, 59 A N-channel HEXFET in D2PAK The Infineon AUIRF3710ZSTRR is a 100 V, 59 A N-channel power MOSFET from the HEXFET series, housed in a D2PAK surface-mount package. It is designed for high-efficiency switching in motor drives, DC-DC converters, battery management, and power-supply stages where low on-resistance and fast switching are required. The 18 mOhm Rds(on) at 35 A and 10 V gate drive keeps conduction losses low in high-current paths, reducing heatsink requirements in a compact D2PAK footprint. A gate charge of 120 nC at 10 V Vgs gives a clear figure for gate-driver sizing and switching-loss estimation — relevant for designs pushing into the tens of kilohertz. ## Active lifecycle — no LTB risk for new builds The AUIRF3710ZSTRR carries an active product status, meaning Infineon continues to manufacture it without a last-time-buy notice. This removes obsolescence risk for production programs currently qualifying the part. ## Sourcing and fit for the BOM line For buyers filling a BOM line, the 100 V drain-source rating and 59 A continuous drain current define the safe operating area for motor-drive and power-conversion stages. The D2PAK surface-mount package suits automated assembly on standard PCB footprints.","metaTitle":"Infineon AUIRF3710ZSTRR N-Channel MOSFET, 100V 59A D2PAK","metaDescription":"Infineon HEXFET N-channel MOSFET, 100V 59A, 18mOhm Rds(on) at 35A 10V, D2PAK surface mount. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"series":"HEXFET®","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0029","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"100.0","Vgs(Th) (Max) @ Id":"4 V @ 250µA","switching_current_a":"59.0","Rds On (Max) @ Id, Vgs":"18mOhm @ 35 A, 10 V","Gate Charge (Qg) (Max) @ Vgs":"120 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.23","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/3a4b815b0214125ff7cd0e0f7018ce51.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of AUIRF3710ZSTRR?","answer":"The maximum Rds(on) is 18 mOhm at 35 A drain current with a 10 V gate drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRF3710ZSTRR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRF3710ZSTRR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}