{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRF3504","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRF3504","canonicalUrl":"https://icboms.com/infineon/AUIRF3504","factsUrl":"https://icboms.com/api/mcp/products/AUIRF3504","rawCanonicalId":null},"summary":{"shortDescription":"Infineon AUIRF3504 HEXFET® N-Channel MOSFET, 40 V Vds, 87 A switching current, 9.2 mOhm Rds(on) at 10 Vgs, through-hole, bulk.","salesMarkdown":"## 40 V automotive-grade N-channel The AUIRF3504 is an N-channel HEXFET® MOSFET from Infineon, rated for 40 V drain-source and 87 A switching current — the voltage ceiling gives margin on a 12 V automotive bus during load-dump transients, while the current rating supports high-power solenoids, DC-DC stages, and motor pre-drive circuits. ## Temperature range and package Junction temperature range spans -55 to 175 °C — this is the automotive Grade 0 band, meaning the die and package are qualified for under-hood and engine-bay environments where ambient can reach 125 °C and self-heating adds margin. Through-hole mounting with bulk packaging — the part ships in tubes or trays, not tape-and-reel. For a pick-and-place line, verify the tube compatibility with your feeder system, or plan for manual insertion on lower-volume builds. Maximum gate-source voltage is ±20 V — the gate oxide breakdown threshold. A 10 V drive is safe, but any ringing or overshoot on the gate node must stay within this window; a 15 V Zener clamp across gate-source is common practice in noisy environments. No pin-compatible direct replacement from the same family is listed — the AUIRF3504 is the baseline order code.","metaTitle":"AUIRF3504 N-Channel MOSFET, 40 V, 87 A, 9.2 mOhm","metaDescription":"AUIRF3504 automotive N-channel HEXFET MOSFET, 40 V Vds, 87 A switching current, 9.2 mOhm Rds(on) at 10 Vgs. Active production, sourced to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"143.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","capacitance_uf":"0.0022","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"40.0","Vgs(Th) (Max) @ Id":"4 V @ 100µA","switching_current_a":"87.0","Rds On (Max) @ Id, Vgs":"9.2mOhm @ 52 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"54 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.87","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7c150fc6bff1ee7ebb7e9e990b3b46c0.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What gate drive voltage does the AUIRF3504 need for minimum on-resistance?","answer":"The 4 V max threshold at 100 µA means 5 V logic may not fully enhance the channel, leaving higher conduction loss."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRF3504","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRF3504 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}