{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRF2807","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRF2807","canonicalUrl":"https://icboms.com/infineon/AUIRF2807","factsUrl":"https://icboms.com/api/mcp/products/AUIRF2807","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® series, N-Channel MOSFET, AUIRF2807, 75 V, 75 A, 13 mOhm, TO-220, Through Hole, Bulk.","salesMarkdown":"## What the headline ratings mean for a board-level swap The AUIRF2807 is an automotive-grade N-channel HEXFET rated for 75 V drain-source and 75 A continuous drain current. The 13 mOhm max Rds(on) at 43 A and 10 V gate drive means conduction losses stay under 0.6 W at that current — the part runs cool enough that the TO-220 tab alone handles the thermal load without forced air in most automotive under-hood environments. A 160 nC gate at 20 kHz draws 3.2 mA from the gate driver — well within the output capability of most automotive half-bridge drivers, but the driver's peak current still needs to charge the gate in the desired dead-time window. ## Temperature grade and where it fits The junction temperature range spans -55°C to 175°C. This is the full automotive-grade band — the part survives cold-crank at -40°C and still has margin at 150°C under-hood ambient. The 175°C absolute maximum junction temperature is the hard ceiling; the Rds(on) roughly doubles from 25°C to 150°C, so the conduction loss budget needs derating for sustained high-temperature operation. Below 10 V the Rds(on) rises sharply — a 5 V gate might see 2-3× the 13 mOhm figure. No pin-compatible second-source or successor is listed on the official record.","metaTitle":"AUIRF2807 HEXFET N-Channel MOSFET, 75V, 75A, TO-220","metaDescription":"AUIRF2807 automotive HEXFET N-channel MOSFET, 75V, 75A, 13mOhm Rds(on), -55 to 175°C. Active production, sourced per RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"230.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","capacitance_uf":"0.0038","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"75.0","Vgs(Th) (Max) @ Id":"4 V @ 250µA","switching_current_a":"75.0","Rds On (Max) @ Id, Vgs":"13mOhm @ 43 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"160 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.31","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/5b8d5de029013a1a2e5ea1129a792339.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the AUIRF2807's gate threshold voltage?","answer":"The maximum gate threshold voltage is 4 V at a drain current of 250 µA."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRF2807","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRF2807 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}