{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRF1404ZS","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRF1404ZS","canonicalUrl":"https://icboms.com/infineon/AUIRF1404ZS","factsUrl":"https://icboms.com/api/mcp/products/AUIRF1404ZS","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® N-Channel MOSFET, AUIRF1404ZS, 40V, 160A, 3.7 mOhm Rds(on) @ 75A/10V, 150 nC gate charge, 200W, D2PAK, Surface Mount.","salesMarkdown":"## 3.7 mOhm Rds(on) — conduction loss floor for high-current switching The AUIRF1404ZS is an Infineon HEXFET N-channel MOSFET rated at 40 V drain-source with a continuous drain current of 160 A. The on-resistance is specified at 3.7 mOhm maximum at Vgs=10 V and Id=75 A — this sets the conduction loss floor in a 40 V bus application. With a total gate charge of 150 nC at Vgs=10 V, the driver must supply the required peak current for the switching frequency; lower frequencies relax the drive current proportionally. ## 175°C junction — under-hood and high-ambient designs The 200 W power dissipation rating assumes the D2PAK package is soldered to a suitable copper area on the PCB — the thermal resistance to ambient depends on the board's copper pour and airflow, not just the device itself.","metaTitle":"AUIRF1404ZS MOSFET N-Ch 40V 160A D2PAK, 3.7 mOhm Rds(on)","metaDescription":"Infineon AUIRF1404ZS N-channel HEXFET MOSFET, 40V, 160A, 3.7 mOhm Rds(on) @ 75A/10V, 150 nC gate charge, 175°C Tj. Active production; quoted to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"200.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0043","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"40.0","Vgs(Th) (Max) @ Id":"4 V @ 250µA","switching_current_a":"160.0","Rds On (Max) @ Id, Vgs":"3.7mOhm @ 75 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"150 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.41","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/242b792b2896cfb06e648b28e67cfc50.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of AUIRF1404ZS?","answer":"The maximum Rds(on) is 3.7 mOhm at Vgs=10 V and Id=75 A. This value is measured at 25°C junction temperature; on-resistance increases with temperature per the normalised curve in the datasheet."},{"question":"What is the gate charge of AUIRF1404ZS?","answer":"Total gate charge (Qg) is 150 nC at Vgs=10 V. This figure drives the gate-driver peak current requirement — for example, 150 nC switched at 100 kHz needs an average drive current of 15 mA, though peak current during the Miller plateau is higher."},{"question":"What is the difference between AUIRF1404ZS and AUIRF1404Z?","answer":"The 'S' suffix in AUIRF1404ZS indicates the part is supplied in bulk (tube or loose) packaging rather than tape-and-reel. The die, package (D2PAK), and electrical ratings are identical. The AUIRF1404Z is typically offered on tape-and-reel for automated pick-and-place."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRF1404ZS","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRF1404ZS when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}