{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRF1404S","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRF1404S","canonicalUrl":"https://icboms.com/infineon/AUIRF1404S","factsUrl":"https://icboms.com/api/mcp/products/AUIRF1404S","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET AUIRF1404S, N-Channel MOSFET, 40 V, 75 A, 4 mOhm Rds(on) at 95 A/10 V, 200 nC gate charge, D2PAK surface mount, -55°C to 175°C junction.","salesMarkdown":"## 40 V, 75 A N-channel in D2PAK — conduction loss floor The AUIRF1404S is an Infineon HEXFET N-channel MOSFET rated 40 V drain-source with a continuous drain current of 75 A. The headline on-resistance is 4 mOhm maximum at 95 A drain current and 10 V gate drive — this is the conduction loss floor at 25 °C junction; actual Rds(on) rises with temperature per the normalised curve, so budget headroom in the thermal path for a 175 °C junction ceiling. ## Gate charge — 200 nC at 10 V Total gate charge Qg is 200 nC at 10 V. For a 100 kHz switching frequency, the average gate-drive current is 20 mA; the peak current from the driver must be sized to charge 200 nC within the desired switching interval — a 2 A driver delivers a 100 ns rise time. The ±20 V Vgs rating gives margin for gate overdrive in noisy power stages.","metaTitle":"AUIRF1404S N-Channel MOSFET, 40V 75A, 4 mOhm Rds(on) D2PAK","metaDescription":"AUIRF1404S HEXFET N-channel MOSFET, 40V, 75A, 4 mOhm Rds(on) at 95A/10V, 200 nC gate charge, -55°C to 175°C junction. Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"3.8","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0074","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"40.0","Vgs(Th) (Max) @ Id":"4 V @ 250µA","switching_current_a":"75.0","Rds On (Max) @ Id, Vgs":"4mOhm @ 95 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"200 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.10","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/badd338fca8f0a5af0673b5b871a9c12.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the gate charge of AUIRF1404S?","answer":"This determines the gate-drive current needed for the target switching frequency."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRF1404S","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRF1404S when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}