{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AUIRF1010ZL","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AUIRF1010ZL","canonicalUrl":"https://icboms.com/infineon/AUIRF1010ZL","factsUrl":"https://icboms.com/api/mcp/products/AUIRF1010ZL","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® series, AUIRF1010ZL, N-Channel MOSFET, 55 V Vdss, 75 A continuous drain, 7.5 mOhm Rds(on) at 10 V, 140 W dissipation, TO-262-3 through-hole package, -55°C to 175°C junction temperature.","salesMarkdown":"The Infineon AUIRF1010ZL is a 55 V, 75 A N-channel HEXFET power MOSFET in a TO-262 through-hole package. It is built on the HEXFET trench technology and targets high-current switching applications — motor drives, DC-DC converters, battery protection, and automotive load switching where the 175°C junction rating gives headroom over standard 150°C parts. ## 7.5 mOhm at 10 V — sizing the gate drive and thermal budget At full rated current that is about 42 W of dissipation in the channel alone, which the 140 W package limit can handle with adequate heatsinking — but the junction-to-case thermal path needs a good interface. ## 175°C junction — built for under-hood and high-ambient environments The -55°C to 175°C junction temperature range places this part in the military-temp class. For a 55 V MOSFET, that matters in automotive under-hood or industrial enclosures where ambient can hit 105°C and the junction sees another 50-60°C rise from dissipation. A 150°C-rated part would derate current significantly at those ambients; the 175°C rating keeps the full 75 A capability available across a wider operating window.","metaTitle":"Infineon AUIRF1010ZL N-Channel HEXFET MOSFET, 55V, 75A","metaDescription":"AUIRF1010ZL N-channel HEXFET MOSFET: 55V Vdss, 75A continuous drain, 7.5mOhm Rds(on) at 10V. TO-262 through-hole package. Active lifecycle.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Logic ICs"],"specifications":{"Series":"HEXFET®","Package":"Bulk","FET Type":"N-Channel","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Long Leads, I²Pak, TO-262AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"7.5mOhm @ 75A, 10V","Power Dissipation (Max)":"140W (Tc)","Supplier Device Package":"TO-262","Gate Charge (Qg) (Max) @ Vgs":"95 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"2840 pF @ 25 V","Current - Continuous Drain (Id) @ 25°C":"75A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.24","stockQuantity":0,"priceTiers":[{"qty":243,"price":"$1.24000","currency":"USD"}]},"links":{"datasheetUrl":"https://rocelec.widen.net/view/pdf/986aglipbc/INFN-S-A0002296928-1.pdf?t.download=true&u=5oefqw","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of AUIRF1010ZL at 10V?","answer":"That is the number to use for worst-case conduction loss calculations at full load."},{"question":"What is the maximum junction temperature of AUIRF1010ZL?","answer":"The operating junction temperature range is -55°C to 175°C. The 175°C maximum gives additional thermal headroom compared to standard 150°C-rated MOSFETs."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AUIRF1010ZL","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AUIRF1010ZL when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}