{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AIMW120R035M1HXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AIMW120R035M1HXKSA1","canonicalUrl":"https://icboms.com/infineon/AIMW120R035M1HXKSA1","factsUrl":"https://icboms.com/api/mcp/products/AIMW120R035M1HXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™ Automotive series, AIMW120R035M1HXKSA1, N-channel SiCFET, 1200 V drain-source, 52 A continuous drain, 46 mOhm Rds(on) at 18 V, PG-TO247-3-41 package, through-hole mount, -55°C to 175°C junction temperature, AEC-Q101 qualified.","salesMarkdown":"## 1200 V CoolSiC MOSFET — automotive-grade switching It belongs to the CoolSiC™ Automotive series and carries AEC-Q101 qualification, making it a candidate for traction inverters, on-board chargers, and DC-DC converters in hybrid and electric vehicle powertrains. Maximum on-resistance is 46 mOhm at 25 A drain current with 18 V gate drive. This is the figure to use for worst-case conduction loss calculations at rated current; actual Rds(on) will rise with junction temperature, so the thermal loop should budget headroom above the 25°C value. Total gate charge is 59 nC at 18 V. It is ROHS3 compliant.","metaTitle":"Infineon AIMW120R035M1HXKSA1 CoolSiC MOSFET, 1200 V, 52 A","metaDescription":"Infineon AIMW120R035M1HXKSA1 N-channel SiCFET, 1200 V drain-source, 46 mOhm Rds(on) at 18 V. AEC-Q101 qualified.","metaKeywords":null},"attributes":{"series":"Automotive, AEC-Q101, CoolSiC™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"Automotive, AEC-Q101, CoolSiC™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"+23V, -7V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.7V @ 10mA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"46mOhm @ 25A, 18V","Power Dissipation (Max)":"228W (Tc)","Supplier Device Package":"PG-TO247-3-41","Gate Charge (Qg) (Max) @ Vgs":"59 nC @ 18 V","Drain to Source Voltage (Vdss)":"1200 V","Input Capacitance (Ciss) (Max) @ Vds":"2130 pF @ 800 V","Drive Voltage (Max Rds On, Min Rds On)":"18V","Current - Continuous Drain (Id) @ 25°C":"52A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$49.71468","priceTiers":[{"qty":1,"price":"$49.71468","currency":"USD"},{"qty":30,"price":"$47.41200","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/7bb80338a714e57d82fdb97cca83ec37.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/AIMW120R035M1HXKSA1/alternatives.json"},"ai":{"faq":[{"question":"Is AIMW120R035M1HXKSA1 AEC-Q101 qualified?","answer":"Yes, the AIMW120R035M1HXKSA1 is listed under the Automotive, AEC-Q101 series, confirming qualification for automotive applications including under-hood and chassis-domain environments."},{"question":"What is the gate charge of AIMW120R035M1HXKSA1?","answer":"Total gate charge is 59 nC at 18 V gate-source voltage. This figure is used to size the gate-drive power supply and estimate switching losses at the target frequency."},{"question":"Is AIMW120R035M1HXKSA1 RoHS compliant?","answer":"Yes, the part is ROHS3 compliant."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AIMW120R035M1HXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AIMW120R035M1HXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-09-28T15:04:15.359Z","lastPublished":"2026-09-28T15:04:15.359Z","indexable":true}}