{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AIDW30S65C5XKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"AIDW30S65C5XKSA1","canonicalUrl":"https://icboms.com/infineon/AIDW30S65C5XKSA1","factsUrl":"https://icboms.com/api/mcp/products/AIDW30S65C5XKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™ Automotive series, AIDW30S65C5XKSA1, Silicon Carbide Schottky Diode, 650 V DC reverse, 30 A average rectified, 0 ns reverse recovery time, TO-247-3 through-hole package, -40°C to 175°C junction temperature.","salesMarkdown":"## Zero trr — the SiC switching advantage The AIDW30S65C5XKSA1 is an Infineon CoolSiC™ silicon carbide Schottky diode rated at 650 V reverse voltage and 30 A average rectified current. Its defining characteristic is a reverse recovery time of 0 ns — the majority-carrier SiC structure simply has no stored charge to sweep out. ## 175°C junction — thermal headroom for automotive The 175°C ceiling is the high end for automotive-grade SiC Schottkys — it covers under-hood ambient plus self-heating at 30 A without derating the voltage rating. Forward voltage is specified at 1.7 V maximum at 30 A and 25°C junction. Conduction loss at full load is 51 W peak; paired with the zero-recovery switching loss, the total dissipation stays within the TO-247-3 package capability when mounted to a proper heatsink. ## Automotive qualification and compliance This part carries the Automotive, AEC-Q100/101 qualification — it is released for production in automotive power train, on-board charger, and DC-DC converter applications. The series designation is CoolSiC™, Infineon's silicon-carbide Schottky technology platform. The part is ROHS3 compliant. ## Package and mounting Supplied in the PG-TO247-3-41 package — a standard TO-247-3 through-hole footprint with three leads. The large copper tab provides a low thermal resistance path to the heatsink. Mounting torque per the datasheet is typically 0.8–1.0 Nm; the package is compatible with existing TO-247 clip or screw-mount hardware.","metaTitle":"Infineon AIDW30S65C5XKSA1 SiC Schottky Diode, 650V 30A","metaDescription":"Infineon AIDW30S65C5XKSA1 silicon carbide Schottky diode, 650V reverse, 30A average, zero trr. AEC-Q101 qualified, 175°C junction.","metaKeywords":null},"attributes":{"series":"Automotive, AEC-Q100/101, CoolSiC™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Speed":"No Recovery Time > 500mA (Io)","Series":"Automotive, AEC-Q100/101, CoolSiC™","Package":"Tube","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"860pF @ 1V, 1MHz","Supplier Device Package":"PG-TO247-3-41","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"120 µA @ 650 V","Voltage - DC Reverse (Vr) (Max)":"650 V","Current - Average Rectified (Io)":"30A","Operating Temperature - Junction":"-40°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1.7 V @ 30 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$9.93","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$9.93000","currency":"USD"},{"qty":10,"price":"$8.97200","currency":"USD"},{"qty":100,"price":"$7.42790","currency":"USD"},{"qty":500,"price":"$6.46816","currency":"USD"},{"qty":1000,"price":"$6.35022","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/dd78330408a7762421cc1f7ce5679079.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is AIDW30S65C5XKSA1 automotive qualified?","answer":"Yes. The AIDW30S65C5XKSA1 is listed under the Automotive, AEC-Q100/101 series and is qualified for automotive applications. It is part of Infineon's CoolSiC™ product family."},{"question":"What is the reverse recovery time of AIDW30S65C5XKSA1?","answer":"The reverse recovery time (trr) is 0 ns. As a silicon carbide Schottky diode, it has no minority carrier storage and therefore exhibits zero reverse recovery charge, eliminating switching losses in hard-switched topologies."},{"question":"Can AIDW30S65C5XKSA1 replace a standard silicon ultrafast diode?","answer":"Yes, in most power circuits a SiC Schottky is a direct functional replacement for a silicon ultrafast diode of the same voltage and current rating. The key difference is the zero trr — the SiC part eliminates the recovery-related switching loss and ringing that a silicon diode generates. The TO-247-3 footprint is standard, so the board layout does not change. The trade-off is higher upfront cost per device versus silicon."},{"question":"What is the maximum junction temperature of AIDW30S65C5XKSA1?","answer":"The 175°C maximum allows operation in high-ambient automotive environments without derating the 650 V blocking voltage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/AIDW30S65C5XKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/AIDW30S65C5XKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}