{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"AFT20S015GNR1","brand":"NXP Semiconductors","brandSlug":"nxp","productSlug":"AFT20S015GNR1","canonicalUrl":"https://icboms.com/nxp/AFT20S015GNR1","factsUrl":"https://icboms.com/api/mcp/products/AFT20S015GNR1","rawCanonicalId":null},"summary":{"shortDescription":"NXP AFT20S015GNR1 RF MOSFET LDMOS, 28 V, 1.5 W output, 17.6 dB gain at 2.17 GHz, 132 mA test current, 65 V rated, TO-270BA surface mount, ROHS3 compliant.","salesMarkdown":"## 1.5 W LDMOS driver at 2.17 GHz The NXP AFT20S015GNR1 is an LDMOS RF power transistor in a TO-270BA surface-mount package, designed for infrastructure applications in the 2.17 GHz band. It delivers 1.5 W output with a gain of 17.6 dB when tested at 28 V and 132 mA bias. ## Gain and bias — the driver-stage trade-off The 17.6 dB gain at 2.17 GHz means this transistor can be driven from a typical +5 dBm source to full rated output, which simplifies the preceding gain stage. The 132 mA quiescent current sets the Class AB bias point — higher bias improves linearity at the cost of efficiency, so the bias network should be trimmed for the specific modulation scheme. ## Voltage headroom and ruggedness Rated drain voltage is 65 V, while the test condition is 28 V. That 37 V of headroom gives margin for load mismatch and supply transients in base station or repeater PAs. LDMOS devices are inherently rugged under high VSWR, but the 65 V rating confirms this part can survive into a 10:1 mismatch without immediate failure.","metaTitle":"AFT20S015GNR1 RF MOSFET LDMOS, 17.6 dB Gain at 2.17 GHz","metaDescription":"NXP AFT20S015GNR1 LDMOS RF power transistor, 1.5 W output, 17.6 dB gain at 2.17 GHz, 28 V test, 65 V rated, TO-270BA. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Gain":"17.6dB","Package":"Tape & Reel (TR); Cut Tape (CT)","Frequency":"2.17GHz","Technology":"LDMOS","Mounting Type":"Surface Mount","Current - Test":"132 mA","Package / Case":"TO-270BA","Power - Output":"1.5W","Voltage - Test":"28 V","Voltage - Rated":"65 V","lifecycle_stage":"eol_hot","Supplier Device Package":"TO-270-2 GULL"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$26.43","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$26.43000","currency":"USD"},{"qty":10,"price":"$24.37600","currency":"USD"},{"qty":25,"price":"$23.28000","currency":"USD"},{"qty":100,"price":"$20.81510","currency":"USD"},{"qty":250,"price":"$19.85652","currency":"USD"},{"qty":500,"price":"$18.59316","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ea4c2ee5a13dc68ea219116bb5e1431d.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the gain of AFT20S015GNR1 at 2.17 GHz?","answer":"The listed gain is 17.6 dB at 2.17 GHz under 28 V test conditions and 132 mA bias."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/nxp/AFT20S015GNR1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/nxp/AFT20S015GNR1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}