{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"ADUM4135BRWZ","brand":"Analog Devices","brandSlug":"analog-devices","productSlug":"ADUM4135BRWZ","canonicalUrl":"https://icboms.com/analog-devices/ADUM4135BRWZ","factsUrl":"https://icboms.com/api/mcp/products/ADUM4135BRWZ","rawCanonicalId":null},"summary":{"shortDescription":"Analog Devices ADUM4135BRWZ, iCoupler series, isolated single-channel gate driver, 4A peak output, 5000Vrms isolation, 16ns rise/fall, 66ns propagation delay, 100kV/µs CMTI, 12V-30V output supply, -40°C to 125°C, 16-SOIC.","salesMarkdown":"## Isolated gate driver with 4A peak for SiC and IGBT switching The ADUM4135BRWZ: It delivers 4A peak output current with 16ns typical rise and fall times, making it suited for directly driving the gate capacitance of SiC MOSFETs and IGBT modules in hard-switched topologies. The 5000Vrms reinforced isolation rating and 100kV/µs minimum common-mode transient immunity (CMTI) keep the control side decoupled from the high-voltage switching node, even in motor-drive or inverter environments where the reference voltage jumps at tens of kV/µs. Propagation delay is 66ns max, symmetrical on both edges, which simplifies dead-time calculation. The output supply range of 12V to 30V matches standard gate-drive bias rails — 15V for IGBTs, 18V to 20V for SiC — without needing an extra regulator. The 4A peak output is the number that decides whether this driver can charge the gate of a 60A SiC MOSFET or a 300A IGBT module fast enough to stay out of the linear region. The symmetrical 66ns tpLH/tpHL means you don't need to pad the dead-time for one edge being slower, which recovers a few hundred nanoseconds of duty-cycle headroom. The 100kV/µs CMTI is the spec that keeps the gate drive from glitching when the high-side switch node slews through the Miller plateau — if the CMTI is marginal, the output can latch or produce a narrow pulse that saturates the transformer. At 100kV/µs minimum, this part clears the requirement for most SiC and GaN half-bridge layouts with a healthy margin. ## Package and mounting — 16-SOIC wide-body The ADUM4135BRWZ comes in a 16-SOIC wide-body package (0.295-inch body width, 7.50mm), surface-mount. The wide-body SOIC provides the creepage distance needed to sustain the 5000Vrms isolation rating across the package — standard narrow SOIC-16 would not meet that clearance. The tube shipment variant (ADUM4135BRWZ) is the one to order for prototype and low-volume builds; the tape-and-reel variant ADUM4135BRWZ-RL is the production-volume option. Both are electrically identical.","metaTitle":"ADUM4135BRWZ Isolated Gate Driver, 4A Peak, 5kVrms, 16-SOIC","metaDescription":"ADI ADUM4135BRWZ iCoupler isolated gate driver: 4A peak output, 5kVrms isolation, 100kV/µs CMTI, 66ns propagation delay. Active lifecycle, 16-SOIC package.","metaKeywords":null},"attributes":{"series":"iCoupler®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Digital Isolators"],"specifications":{"Series":"iCoupler®","Package":"Tube","Technology":"Magnetic Coupling","Mounting Type":"Surface Mount","Package / Case":"16-SOIC (0.295\\\", 7.50mm Width)","lifecycle_stage":"eol_hot","Number of Channels":"1","Voltage - Isolation":"5000Vrms","Current - Peak Output":"4A","Operating Temperature":"-40°C ~ 125°C","Rise / Fall Time (Typ)":"16ns, 16ns","Supplier Device Package":"16-SOIC","Voltage - Output Supply":"12V ~ 30V","Propagation Delay tpLH / tpHL (Max)":"66ns, 66ns","Common Mode Transient Immunity (Min)":"100kV/µs"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$7.62","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$7.62000","currency":"USD"},{"qty":10,"price":"$6.88400","currency":"USD"},{"qty":25,"price":"$6.56360","currency":"USD"},{"qty":100,"price":"$5.69900","currency":"USD"},{"qty":250,"price":"$5.44288","currency":"USD"},{"qty":500,"price":"$4.96264","currency":"USD"},{"qty":1000,"price":"$4.32230","currency":"USD"}]},"links":{"datasheetUrl":"https://www.analog.com/media/en/technical-documentation/data-sheets/ADuM4135.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can ADUM4135BRWZ drive SiC MOSFETs?","answer":"Yes. The 4A peak output current and 16ns rise/fall time are sufficient to charge the gate capacitance of most SiC MOSFETs in the 30A to 100A range. The 100kV/µs CMTI handles the fast switching node slew rates typical in SiC half-bridges. The output supply range of 12V to 30V covers the 18V to 20V gate drive voltage that SiC devices typically need for full Rds(on) enhancement."},{"question":"Can ADUM4135BRWZ drive IGBTs?","answer":"Yes. The 4A peak output is enough to drive the gate of medium-power IGBT modules up to about 200A, depending on gate charge. The 66ns propagation delay and 16ns rise/fall keep switching losses low in hard-switched inverter and motor-drive applications. The output supply range includes the standard 15V IGBT gate drive level."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/analog-devices/ADUM4135BRWZ","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/analog-devices/ADUM4135BRWZ when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}