{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"71V416L10BE","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"71V416L10BE","canonicalUrl":"https://icboms.com/renesas/71V416L10BE","factsUrl":"https://icboms.com/api/mcp/products/71V416L10BE","rawCanonicalId":null},"summary":{"shortDescription":"Renesas 71V416L10BE, 4Mbit Asynchronous SRAM, 256K x 16 organization, 10 ns access time, 3V ~ 3.6V supply, Parallel interface, 48-TFBGA / 48-CABGA (9x9), 0°C ~ 70°C, Active.","salesMarkdown":"## 10 ns asynchronous SRAM — the fit check for a fast cache line The 10 ns figure is the cycle time from address change to valid data out — a 100 MHz bus can read it back-to-back with zero dead cycles, but a 133 MHz or faster controller will need a wait state or a pipelined SRAM. The parallel interface is straightforward: assert chip select, address lines, and output enable; data appears on the bus 10 ns later. No refresh logic needed — it's truly asynchronous, so it drops into any memory controller that supports a basic SRAM handshake. ## Package and supply — the board-level constraints The 71V416L10BE comes in a 48-TFBGA (48-CABGA) package with a 9x9 mm body. That's a fine-pitch BGA — 0.75 mm ball pitch typical for this form factor — so the PCB needs via-in-pad or microvias for routing, and rework requires a hot-air station with a BGA nozzle and a stencil for the solder paste. ## Lifecycle and sourcing posture That removes the immediate obsolescence risk for a BOM line.","metaTitle":"71V416L10BE 4Mbit Async SRAM, 10 ns, 48-CABGA","metaDescription":"71V416L10BE is a 4Mbit (256K x 16) asynchronous SRAM with 10 ns access time in a 48-CABGA package. Active lifecycle, 3V-3.6V supply, 0°C to 70°C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Logic ICs"],"specifications":{"Package":"Bulk","Technology":"SRAM - Asynchronous","Access Time":"10 ns","Memory Size":"4Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"48-TFBGA","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"3V ~ 3.6V","Memory Organization":"256K x 16","Operating Temperature":"0°C ~ 70°C (TA)","Supplier Device Package":"48-CABGA (9x9)","Write Cycle Time - Word, Page":"10ns"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.46","stockQuantity":0,"priceTiers":[{"qty":68,"price":"$4.46000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/29881c8a7a8cc23b8bade85996897557.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the difference between the 71V416L10BE and the 71V416L20BE?","answer":"The primary difference is the access time: the 71V416L10BE is rated at 10 ns, while the 71V416L20BE is a slower 20 ns variant. Both are 4Mbit asynchronous SRAMs in the same 48-CABGA package with the same pinout, so they are footprint-compatible. The 10 ns part is the faster option for designs that need zero-wait-state operation on a 100 MHz bus; the 20 ns part is a cost-reduction candidate if the system can tolerate the slower access."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/71V416L10BE","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/71V416L10BE when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}