{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"2N6847","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"2N6847","canonicalUrl":"https://icboms.com/infineon/2N6847","factsUrl":"https://icboms.com/api/mcp/products/2N6847","rawCanonicalId":null},"summary":{"shortDescription":"IRF 2N6847 HEXFET P-Channel power MOSFET, 200 V Vds, 2.5 A Id, 1.725 Ohm Rds(on), TO-220 through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"## P-Channel high-side switch for 200 V rails The 2N6847 is a P-Channel HEXFET power MOSFET rated for 200 V drain-source and 2.5 A continuous drain current, in a through-hole TO-220 package. P-channel construction simplifies high-side switching — you drive the gate referenced to the source rail rather than bootstrapping an N-channel part. The 1.725 Ohm maximum Rds(on) at 10 V gate drive sets the conduction loss floor: at 2.5 A the dissipation is roughly 10.8 W, leaving headroom below the 20 W package limit. ## Gate drive and switching losses Total gate charge is 8.4 nC at 10 V, which keeps the drive current modest even at tens of kilohertz — a 100 kHz switch at that Qg draws about 0.84 mA from the driver. The ±20 V Vgs maximum gives margin for gate ringing on long leads, but the 4 V threshold at 250 µA means the gate needs a clean 10 V rail to fully enhance the channel and hit the rated Rds(on). ## Thermal and package reality Junction temperature range is -55°C to 150°C, covering military and industrial environments. The TO-220 tab is the primary heat path — the thermal resistance to case determines whether a heatsink is needed at full load. The through-hole mounting suits point-to-point wiring, perfboard prototypes, and existing TO-220 footprints on legacy layouts.","metaTitle":"2N6847 P-Channel HEXFET, 200 V, 2.5 A, Through Hole","metaDescription":"2N6847 P-Channel HEXFET power MOSFET, 200 V drain-source, 2.5 A, 1.725 Ohm Rds(on), TO-220 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"20.0","Fet Type":"P-Channel","package_type":"Bulk","mounting_type":"Through Hole","capacitance_uf":"0.0003","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"200.0","Vgs(Th) (Max) @ Id":"4 V @ 250µA","switching_current_a":"2.5","Rds On (Max) @ Id, Vgs":"1.725Ohm @ 2.5 A, 10 V","Operating Temperature High":"-55°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"8.4 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.34","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7d9c81099e505781e75ebe88b0ca30ca.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is the 2N6847 P-channel or N-channel?","answer":"The 2N6847 is a P-Channel MOSFET, identified as a POWER FIELD-EFFECT TRANSISTOR, P type. P-channel construction is preferred for high-side switching because the source connects to the positive rail and the gate drive is referenced to that rail."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/2N6847","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/2N6847 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}