{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"2N2907AL","brand":"Microchip Technology","brandSlug":"microchip","productSlug":"2N2907AL","canonicalUrl":"https://icboms.com/microchip/2N2907AL","factsUrl":"https://icboms.com/api/mcp/products/2N2907AL","rawCanonicalId":null},"summary":{"shortDescription":"Microchip Technology 2N2907AL PNP transistor, 600 mA collector current, 60 V Vce breakdown, 500 mW power dissipation, TO-206AA / TO-18-3 metal can, through-hole, bulk.","salesMarkdown":"## TO-18 metal can, 600 mA PNP switch The 2N2907AL is a PNP switching transistor in a hermetically sealed TO-18 metal can — the package that dominated military and aerospace sockets for decades. Rated 600 mA continuous collector current and 60 V collector-emitter breakdown, it handles moderate loads in legacy and new designs where the metal can's reliability and thermal cycling tolerance beat plastic. The TO-18 (TO-206AA) three-lead can sits in a 0.230-inch diameter footprint with a 0.100-inch lead spacing — a direct drop-in for any board originally laid out for the 2N2907 family. The metal enclosure provides a hermetic seal against moisture and outgassing, making it a fit for sealed modules, avionics, and downhole instrumentation where plastic-packaged parts risk popcorn cracking. ## Parametric ceiling — 500 mW at 200°C junction Power dissipation is rated 500 mW at 25°C ambient, derating to zero at 200°C junction. For a 24 V rail switching a 150 mA relay coil, the transistor dissipates roughly 360 mW at saturation — within the 500 mW ceiling but leaving little margin for a hot enclosure. DC current gain (hFE) is guaranteed minimum 100 at 150 mA collector current with 10 V Vce — a solid beta for a general-purpose switch. The 1.6 V Vce(sat) at 50 mA base and 500 mA collector is the on-state voltage drop; at 500 mA the transistor dissipates 0.8 W in saturation, exceeding the 500 mW package limit unless pulsed or heatsunk.","metaTitle":"Microchip 2N2907AL PNP Transistor, 600 mA, 60 V, TO-18","metaDescription":"2N2907AL PNP switching transistor, 600 mA Ic, 60 V Vce, 500 mW, TO-18 metal can. Active production, sourced to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Microchip Technology","Series":"-","Package":"Bulk","Power - Max":"500 mW","Mounting Type":"Through Hole","Package / Case":"TO-206AA, TO-18-3 Metal Can","Product Status":"Active","Transistor Type":"PNP","lifecycle_stage":"eol_hot","Base Product Number":"2N2907","Operating Temperature":"-65°C~200°C(TJ)","Frequency - Transition":"-","Supplier Device Package":"TO-18","Vce Saturation (Max) @ Ib, Ic":"1.6V @ 50mA, 500mA","Current - Collector (Ic) (Max)":"600 mA","Current - Collector Cutoff (Max)":"50nA","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 150mA, 10V","Voltage - Collector Emitter Breakdown (Max)":"60 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.2750","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[{"question":"What are the key electrical ratings for 2N2907AL?","answer":"PNP transistor, 600 mA maximum collector current, 60 V collector-emitter breakdown voltage, 500 mW power dissipation at 25°C. DC current gain (hFE) is minimum 100 at 150 mA, 10 V. Operating junction temperature range is -65°C to 200°C."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/microchip/2N2907AL","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/microchip/2N2907AL when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}