{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"2EDS9265HXUMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"2EDS9265HXUMA1","canonicalUrl":"https://icboms.com/infineon/2EDS9265HXUMA1","factsUrl":"https://icboms.com/api/mcp/products/2EDS9265HXUMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon EiceDriver™ 2EDS9265HXUMA1, dual half-bridge IGBT/SiC MOSFET gate driver, 4A source / 8A sink peak output, 650V bootstrap, 6.5ns rise / 4.5ns fall typ, 20V supply, -40°C to 125°C, PG-DSO-16-30 package.","salesMarkdown":"## Half-bridge gate driver for IGBT and SiC — what the 4A/8A asymmetric drive buys you The Infineon 2EDS9265HXUMA1 is a dual-channel, independent half-bridge gate driver from the EiceDriver™ family, designed to drive both IGBT and SiC MOSFET gates in a single BOM line. Its headline rating is the asymmetric peak output: 4 A source and 8 A sink per channel. The 8 A sink pulls gate charge down fast during turn-off, which directly reduces the dead-time margin needed to prevent shoot-through in a half-bridge — a real advantage when you are pushing switching frequency or tightening the timing budget. ## 650 V bootstrap — bus voltage ceiling for motor drives and SMPS The high-side bootstrap rating of 650 V sets the maximum DC bus voltage for the half-bridge. That covers 400 VDC-class motor drives, three-phase inverters, and server PFC stages with margin. The 20 V supply rail is standard for IGBT gate drive; it also suits SiC MOSFETs that need a 15–20 V gate drive for full enhancement. ## 6.5 ns rise, 4.5 ns fall — edge speed and layout discipline The trade-off: the 16-SOIC package with 7.50 mm width (PG-DSO-16-30 footprint) demands a tight layout — short gate-drive loops, a low-inductance bootstrap capacitor, and a solid ground plane under the driver. The part is surface-mount, so rework is straightforward with hot air if the pad layout follows the recommended footprint. ## Industrial temperature range — motor drives and outdoor gear No derating needed for the typical 85°C internal cabinet ambient.","metaTitle":"Infineon 2EDS9265HXUMA1 EiceDriver™","metaDescription":"Infineon 2EDS9265HXUMA1 EiceDriver™ dual half-bridge gate driver for IGBT and SiC MOSFET. 4A source, 8A sink peak output, 650V bootstrap, 6.5ns rise/4.5ns fall.","metaKeywords":null},"attributes":{"series":"EiceDriver™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"EiceDriver™","Package":"Tape & Reel (TR); Cut Tape (CT)","Gate Type":"IGBT, SiC MOSFET","Input Type":"Non-Inverting","Channel Type":"Independent","Mounting Type":"Surface Mount","Package / Case":"16-SOIC (0.295\\\", 7.50mm Width)","lifecycle_stage":"eol_hot","Voltage - Supply":"20V","Number of Drivers":"2","Driven Configuration":"Half-Bridge","Operating Temperature":"-40°C ~ 125°C (TA)","Rise / Fall Time (Typ)":"6.5ns, 4.5ns","Supplier Device Package":"PG-DSO-16-30","Logic Voltage - VIL, VIH":"-, 1.65V","High Side Voltage - Max (Bootstrap)":"650 V","Current - Peak Output (Source, Sink)":"4A, 8A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.85","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.85000","currency":"USD"},{"qty":10,"price":"$3.45900","currency":"USD"},{"qty":25,"price":"$3.27000","currency":"USD"},{"qty":100,"price":"$2.83410","currency":"USD"},{"qty":250,"price":"$2.68876","currency":"USD"},{"qty":500,"price":"$2.41262","currency":"USD"},{"qty":1000,"price":"$2.03475","currency":"USD"},{"qty":2000,"price":"$1.93301","currency":"USD"},{"qty":5000,"price":"$1.86034","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/6ba2b8c1734cb0c0e96e9d597f169b57.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is 2EDS9265HXUMA1 compatible with SiC MOSFETs?","answer":"Yes. The gate type is specified for both IGBT and SiC MOSFET. The 20 V supply rail and 4 A source / 8 A sink peak output provide the drive strength needed for SiC gate charge, and the 650 V bootstrap covers the high-side voltage range common in SiC half-bridge designs."},{"question":"Does 2EDS9265HXUMA1 have UVLO protection?","answer":"The evidence does not list undervoltage lockout as a separate parameter. The logic input threshold is specified at 1.65 V (VIH), which is TTL-compatible. For UVLO specifics, the datasheet would be the reference — but the part is designed as a standard half-bridge driver and typical EiceDriver™ parts include some form of under-voltage protection on the supply rail."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/2EDS9265HXUMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/2EDS9265HXUMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}