{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"2EDF9275FXUMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"2EDF9275FXUMA1","canonicalUrl":"https://icboms.com/infineon/2EDF9275FXUMA1","factsUrl":"https://icboms.com/api/mcp/products/2EDF9275FXUMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon EiceDriver™ 2EDF9275FXUMA1, half-bridge gate driver, 2 independent channels, 4A source / 8A sink peak output, 20V supply, 650V bootstrap, 6.5ns rise / 4.5ns fall, -40°C to 125°C, 16-SOIC (PG-DSO-16-11).","salesMarkdown":"Infineon lists the 2EDF9275FXUMA1 as Active. ## 4 A source, 8 A sink — asymmetric drive for fast turn-off The 2EDF9275FXUMA1 delivers 4 A peak source and 8 A peak sink. The 2:1 sink-to-source ratio is deliberate: it pulls the gate down harder than it pushes up, which shortens the turn-off delay and reduces the dead-time window needed to prevent shoot-through. In a hard-switched half-bridge, that extra sink current buys margin against cross-conduction at high dV/dt. Rise and fall times are 6.5 ns and 4.5 ns typical. Those sub-10 ns edges mean the gate loop inductance — PCB trace from driver output to MOSFET/IGBT gate — must be kept under 10 nH to avoid ringing that exceeds the gate oxide rating. A tight layout with the driver placed within 10 mm of the power device is the norm. ## 650 V bootstrap — fits 400 VAC / 600 VDC rails The high-side bootstrap pin is rated to 650 V maximum. That covers the DC bus of a three-phase motor drive with margin for switching overshoot. ## 1.65 V VIH — direct 3.3 V logic interface The input logic-high threshold is 1.65 V. A 3.3 V MCU or DSP output drives it directly — no external level shifter or resistor divider needed. The VIL threshold is not specified in the listing, but the 1.65 V VIH is low enough that 1.8 V logic may also work with sufficient noise margin; bench verification is advised for 1.8 V systems. ## Drives IGBT and SiC MOSFET — two independent channels The gate type covers both IGBT and SiC MOSFET. The two channels are independent and non-inverting, so each channel can be used for the high-side and low-side of a half-bridge. The 20 V supply rail is typical for IGBT gate drive. ## 16-SOIC (PG-DSO-16-11) — surface-mount, industrial temp Packaged in a 16-SOIC with body width 3.90 mm, the Infineon PG-DSO-16-11 footprint. ROHS3 compliant.","metaTitle":"Infineon 2EDF9275FXUMA1 EiceDriver","metaDescription":"Infineon 2EDF9275FXUMA1 EiceDriver half-bridge gate driver for IGBT and SiC MOSFET. 4A source, 8A sink peak output, 650V bootstrap, 6.5ns rise/4.5ns fall.","metaKeywords":null},"attributes":{"series":"EiceDriver™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"EiceDriver™","Package":"Tape & Reel (TR); Cut Tape (CT)","Gate Type":"IGBT, SiC MOSFET","Input Type":"Non-Inverting","Channel Type":"Independent","Mounting Type":"Surface Mount","Package / Case":"16-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Voltage - Supply":"20V","Number of Drivers":"2","Driven Configuration":"Half-Bridge","Operating Temperature":"-40°C ~ 125°C (TA)","Rise / Fall Time (Typ)":"6.5ns, 4.5ns","Supplier Device Package":"PG-DSO-16-11","Logic Voltage - VIL, VIH":"-, 1.65V","High Side Voltage - Max (Bootstrap)":"650 V","Current - Peak Output (Source, Sink)":"4A, 8A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.34","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.34000","currency":"USD"},{"qty":10,"price":"$2.99600","currency":"USD"},{"qty":25,"price":"$2.83280","currency":"USD"},{"qty":100,"price":"$2.45500","currency":"USD"},{"qty":250,"price":"$2.32908","currency":"USD"},{"qty":500,"price":"$2.08988","currency":"USD"},{"qty":1000,"price":"$1.76255","currency":"USD"},{"qty":2500,"price":"$1.67442","currency":"USD"},{"qty":5000,"price":"$1.61148","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/6ba2b8c1734cb0c0e96e9d597f169b57.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can 2EDF9275FXUMA1 drive SiC MOSFETs?","answer":"Yes. The gate type is explicitly listed for both IGBT and SiC MOSFET. The 20 V supply rail covers the typical 15 V to 18 V SiC gate drive voltage. The 4 A source / 8 A sink peak current is sufficient to charge and discharge the gate capacitance of common SiC dies in the 30 mOhm to 80 mOhm range within tens of nanoseconds."},{"question":"What is the maximum switching frequency for 2EDF9275FXUMA1?","answer":"The evidence does not list a maximum switching frequency. The 6.5 ns rise and 4.5 ns fall times imply the driver can support switching frequencies well above 100 kHz in a typical half-bridge, but the practical limit depends on the gate charge of the power device, the bootstrap capacitor recharge time, and the thermal dissipation in the driver. For a specific frequency target, model the gate drive losses with your MOSFET/IGBT's Qg."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/2EDF9275FXUMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/2EDF9275FXUMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}