{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"1SS88-E","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"1SS88-E","canonicalUrl":"https://icboms.com/renesas/1SS88-E","factsUrl":"https://icboms.com/api/mcp/products/1SS88-E","rawCanonicalId":null},"summary":{"shortDescription":"1SS88-E, small-signal switching diode, 250 V reverse voltage, 200 mA average rectified current, 100 ns reverse recovery time, 1.5 pF capacitance, DO-35 axial package, through-hole mounting, active production.","salesMarkdown":"## 250 V blocking in a DO-35 body — what it buys you The 1SS88-E is a small-signal switching diode rated for 250 V reverse voltage (Vr) and 200 mA average rectified current (Io), housed in a DO-35 axial-lead package. The 100 ns reverse recovery time (trr) and 1.5 pF junction capacitance at 0 V bias make it suitable for high-voltage low-current rectification, snubbing, or detector circuits where a fast turn-off and minimal capacitive loading are needed. ## Parametric fit — what each rating decides The 250 V reverse voltage ceiling covers 240 VAC line rectification with margin, but the 200 mA forward current limit means this is a signal-path diode, not a bulk power rectifier. The 100 ns trr keeps switching losses low in flyback or boost converters running below 100 kHz. Junction capacitance of 1.5 pF at 0 V bias is low enough for RF detector or high-speed logic clamping without loading the signal. Reverse leakage is 200 nA at 250 V, so standby power in a high-impedance node stays negligible. ## Package and mounting — DO-35 through-hole The DO-35 (DO-204AH) axial-lead package is a through-hole form factor. The leads are solderable into standard 0.025-inch diameter plated-through holes. No special footprint beyond the standard axial-lead layout is needed. It is ROHS3 compliant.","metaTitle":"1SS88-E Diode, 250V 200mA DO-35, 100ns trr","metaDescription":"1SS88-E small-signal switching diode: 250V reverse, 200mA forward, 100ns trr, 1.5pF capacitance, DO-35 axial. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Bulk","Mounting Type":"Through Hole","Package / Case":"DO-204AH, DO-35, Axial","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"1.5pF @ 0V, 1MHz","Supplier Device Package":"DO-35","Reverse Recovery Time (trr)":"100 ns","Current - Reverse Leakage @ Vr":"200 nA @ 250 V","Voltage - DC Reverse (Vr) (Max)":"250 V","Current - Average Rectified (Io)":"200mA","Operating Temperature - Junction":"175°C","Voltage - Forward (Vf) (Max) @ If":"1 V @ 100 mA"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.2","stockQuantity":0,"priceTiers":[{"qty":1466,"price":"$0.20000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/bda18265846ba4a55919190aa1822109.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the reverse recovery time of 1SS88-E?","answer":"The reverse recovery time (trr) is 100 ns, specified at standard test conditions for a small-signal switching diode."},{"question":"What is the capacitance of 1SS88-E?","answer":"Junction capacitance is 1.5 pF measured at 0 V reverse bias and 1 MHz."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/1SS88-E","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/1SS88-E when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}