{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"1N6642US","brand":"Microchip Technology","brandSlug":"microchip","productSlug":"1N6642US","canonicalUrl":"https://icboms.com/microchip/1N6642US","factsUrl":"https://icboms.com/api/mcp/products/1N6642US","rawCanonicalId":null},"summary":{"shortDescription":"Microchip Technology 1N6642US general-purpose fast-recovery diode, 75 V reverse, 300 mA average rectified, 5 ns trr, D-5D SQ-MELF package, Bulk.","salesMarkdown":"## Active production — what it means for the BOM The 1N6642US: No PCN-driven obsolescence risk on the horizon for current designs. One important compliance flag: the part is RoHS non-compliant. Any BOM that requires Pb-free solder or RoHS-10 conformance will need an alternative — this diode is built with tin-lead termination finish. ## 5 ns reverse recovery — where this speed matters The 5 ns typical reverse recovery time (trr) places the 1N6642US in the ultra-fast recovery class, not merely the 'Fast Recovery =< 500 ns' category its description suggests. At 5 ns, it handles switching frequencies well into the MHz range without the reverse-recovery losses that plague slower rectifiers. The low junction capacitance — 5 pF at 0 V, 1 MHz — complements the fast recovery. Together they make the diode suitable for high-speed signal clamping, snubber networks, and flyback catch diodes in low-power DC-DC converters where stored charge must clear quickly. ## 75 V / 300 mA envelope and temperature range Rated 75 V reverse standoff and 300 mA average forward current, the 1N6642US fits low-voltage supply rails, logic-level power paths, and signal rectification stages. The forward drop is 1.2 V maximum at 100 mA — a typical figure for a standard silicon junction, not a Schottky. For designs that must survive cold soak or engine-bay heat, this diode does not require derating until the case temperature approaches 175°C. ## D-5D hermetic surface-mount package The D-5D package is a SQ-MELF (Surface Mount Quadruple MELF) — a hermetic, all-ceramic body with metallized end caps. It is designed for high-reliability and harsh-environment applications where plastic packages risk moisture absorption or outgassing. Surface-mount assembly with the SQ-MELF footprint. The hermetic seal means the die is protected from moisture and contaminants, making the part suitable for sealed modules, aerospace, and down-hole equipment where conformal coating alone is insufficient.","metaTitle":"Microchip 1N6642US Diode, 75V 300mA, 5ns trr, D-5D","metaDescription":"Microchip 1N6642US general-purpose fast-recovery diode, 75V 300mA, 5ns trr, D-5D hermetic package. Active production, RoHS non-compliant. Sourced to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"RoHS non-compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Microchip Technology","Speed":"Fast Recovery =< 500ns, > 200mA (Io)","Series":"-","Package":"Bulk","Diode Type":"Standard","Mounting Type":"Surface Mount","Package / Case":"SQ-MELF, D","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"1N6642","Capacitance @ Vr, F":"5pF @ 0V, 1MHz","Supplier Device Package":"D-5D","Reverse Recovery Time (trr)":"5 ns","Current - Reverse Leakage @ Vr":"500 nA @ 75 V","Voltage - DC Reverse (Vr) (Max)":"75 V","Current - Average Rectified (Io)":"300mA","Operating Temperature - Junction":"-65°C~175°C","Voltage - Forward (Vf) (Max) @ If":"1.2 V @ 100 mA"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.5200","priceTiers":[{"qty":1,"price":"$6.52000","currency":"USD"}]},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/1N6642US/alternatives.json"},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to 1N6642US?","answer":"The JANTX1N6642US and JANS1N6642US variants share the same base die and package but carry military screening. For a commercial alternative, evaluate the 1N6638US series which offers similar 75 V / 300 mA ratings in the same D-5D package, though with slower recovery times."},{"question":"What is the 1N6642US reverse recovery time?","answer":"The 1N6642US has a typical reverse recovery time (trr) of 5 ns. This is well below the 500 ns threshold for the 'Fast Recovery' classification, making it an ultra-fast diode suitable for MHz-range switching."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/microchip/1N6642US","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/microchip/1N6642US when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}