{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"1N6641US","brand":"Microchip Technology","brandSlug":"microchip","productSlug":"1N6641US","canonicalUrl":"https://icboms.com/microchip/1N6641US","factsUrl":"https://icboms.com/api/mcp/products/1N6641US","rawCanonicalId":null},"summary":{"shortDescription":"Microchip Technology 1N6641US fast recovery diode, MIL-PRF-19500/609 series, 50 V, 300 mA, 5 ns trr, SQ-MELF D-5D package, surface mount.","salesMarkdown":"## Fast switching in a hermetic MELF The 1N6641US is a fast recovery diode rated for 300 mA average rectified current with a 5 ns reverse recovery time, making it suitable for high-frequency rectification and snubbing in circuits where speed matters more than raw current capacity. Qualified to MIL-PRF-19500/609, this standard diode handles 50 V reverse voltage and operates across a -65°C to 175°C junction temperature range, which covers military and aerospace thermal extremes. ## Parametric profile for the BOM line Forward voltage is 1.1 V max at 200 mA forward current — the conduction loss at rated load is under 330 mW, so the SQ-MELF package dissipates it without derating in still air. Reverse leakage is 100 nA max at 50 V reverse bias, which keeps standby power negligible in battery-powered or high-impedance circuits.","metaTitle":"Microchip 1N6641US Fast Recovery Diode, 50 V, 300 mA","metaDescription":"1N6641US fast recovery diode, 5 ns trr, 50 V, 300 mA, MIL-PRF-19500/609 qualified. Active production. Sourced to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Microchip Technology","Speed":"Fast Recovery =< 500ns, > 200mA (Io)","Series":"Military, MIL-PRF-19500/609","Package":"Bulk","Diode Type":"Standard","Mounting Type":"Surface Mount","Package / Case":"SQ-MELF, D","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"1N6641","Capacitance @ Vr, F":"-","Supplier Device Package":"D-5D","Reverse Recovery Time (trr)":"5 ns","Current - Reverse Leakage @ Vr":"100 nA @ 50 V","Voltage - DC Reverse (Vr) (Max)":"50 V","Current - Average Rectified (Io)":"300mA","Operating Temperature - Junction":"-65°C~175°C","Voltage - Forward (Vf) (Max) @ If":"1.1 V @ 200 mA"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$9.3300","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/a96c0bb30671a41d780a98206cc5b04b.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/1N6641US/alternatives.json"},"ai":{"faq":[{"question":"What is the reverse recovery time of the 1N6641US?","answer":"The 1N6641US has a 5 ns reverse recovery time, which qualifies it as a fast recovery diode per the < 500 ns threshold at > 200 mA."},{"question":"What military specification covers the 1N6641US?","answer":"The 1N6641US is qualified to MIL-PRF-19500/609, the military standard for semiconductor diodes."},{"question":"What package does the 1N6641US come in?","answer":"It comes in a SQ-MELF, D package (supplier device package D-5D), which is a surface-mount hermetic package suited for high-reliability environments."},{"question":"What is the maximum junction temperature for the 1N6641US?","answer":"The junction temperature range is -65°C to 175°C, covering military and aerospace thermal requirements."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/microchip/1N6641US","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/microchip/1N6641US when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}