{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"1N6640US","brand":"Microchip Technology","brandSlug":"microchip","productSlug":"1N6640US","canonicalUrl":"https://icboms.com/microchip/1N6640US","factsUrl":"https://icboms.com/api/mcp/products/1N6640US","rawCanonicalId":null},"summary":{"shortDescription":"Microchip Technology 1N6640US fast recovery diode, 75 V reverse voltage, 300 mA average rectified current, 4 ns reverse recovery time, SQ-MELF D-5D package, bulk.","salesMarkdown":"## 75 V, 300 mA fast recovery in a hermetic SQ-MELF The Microchip Technology 1N6640US is a fast recovery diode rated for 75 V DC reverse voltage and 300 mA average rectified current, with a 4 ns reverse recovery time that places it well inside the Fast Recovery classification (≤500 ns at >200 mA). The SQ-MELF (D-5D) surface-mount package is a hermetic, ceramic-bodied cylindrical case designed for high-reliability and aerospace applications where moisture resistance and thermal cycling survivability are required. ## Junction temperature range and leakage profile The -65°C to 175°C junction temperature range covers the full military/aerospace thermal envelope — the 175°C upper limit allows operation in engine-bay or down-hole environments where commercial-grade diodes would fail. Forward voltage is 1 V maximum at 200 mA forward current — the 0.2 W conduction loss at rated current is manageable within the SQ-MELF's thermal impedance, but derating is required above 125°C case temperature.","metaTitle":"Microchip 1N6640US Fast Recovery Diode, 75V 300mA, SQ-MELF","metaDescription":"Microchip Technology 1N6640US fast recovery diode, 75V VR, 300mA IO, 4ns trr, -65°C to 175°C junction temp. Active production, SQ-MELF D-5D package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Microchip Technology","Speed":"Fast Recovery =< 500ns, > 200mA (Io)","Series":"-","Packaging":"Bulk","Technology":"Standard","Part Status":"Active","Mounting Type":"Surface Mount","Package / Case":"SQ-MELF, D","lifecycle_stage":"eol_hot","Base Product Number":"1N6640","Capacitance @ Vr, F":"-","Supplier Device Package":"D-5D","Reverse Recovery Time (trr)":"4 ns","Current - Reverse Leakage @ Vr":"100 nA @ 50 V","Voltage - DC Reverse (Vr) (Max)":"75 V","Current - Average Rectified (Io)":"300mA","Operating Temperature - Junction":"-65°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1 V @ 200 mA"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$8.7400","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/2d36eea6fb9792071953327b04ef5517.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/1N6640US/alternatives.json"},"ai":{"faq":[{"question":"What is the reverse recovery time of the 1N6640US?","answer":"The 1N6640US has a 4 ns reverse recovery time, which qualifies it as a Fast Recovery diode (≤500 ns at >200 mA)."},{"question":"What package does the 1N6640US use?","answer":"The 1N6640US comes in a SQ-MELF (D-5D) surface-mount package, supplied in bulk."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/microchip/1N6640US","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/microchip/1N6640US when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}