{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"1N6631US","brand":"Microchip Technology","brandSlug":"microchip","productSlug":"1N6631US","canonicalUrl":"https://icboms.com/microchip/1N6631US","factsUrl":"https://icboms.com/api/mcp/products/1N6631US","rawCanonicalId":null},"summary":{"shortDescription":"Microchip Technology 1N6631US standard fast recovery diode, 1.4 A average rectified, 1100 V reverse voltage, 60 ns trr, SQ-MELF A package, surface mount.","salesMarkdown":"## Fast recovery rectifier for high-voltage snubbing and freewheeling The Microchip Technology 1N6631US is a standard fast recovery diode rated for 1.4 A average rectified current (Io) and 1100 V DC reverse voltage (Vr). ## Parametric profile and switching performance Reverse leakage is specified at 4 µA maximum at the full 1100 V blocking voltage, confirming the junction's high-voltage integrity at temperature. Junction capacitance measures 40 pF at 10 V reverse bias and 1 MHz — a low enough figure to keep switching losses modest in high-frequency rectifier and snubber circuits. The 60 ns trr means the diode clears stored charge quickly enough for typical 50-100 kHz SMPS secondary rectification without excessive ringing.","metaTitle":"Microchip 1N6631US Fast Recovery Diode, 1.4A 1100V SQ-MELF","metaDescription":"Microchip Technology 1N6631US standard fast recovery diode, 1.4A average rectified, 1100V reverse voltage, 60ns trr, SQ-MELF package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Microchip Technology","Speed":"Fast Recovery =< 500ns, > 200mA (Io)","Series":"-","Package":"Bulk","Diode Type":"Standard","Mounting Type":"Surface Mount","Package / Case":"SQ-MELF, A","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"1N6631","Capacitance @ Vr, F":"40pF @ 10V, 1MHz","Supplier Device Package":"A-MELF","Reverse Recovery Time (trr)":"60 ns","Current - Reverse Leakage @ Vr":"4 µA @ 1100 V","Voltage - DC Reverse (Vr) (Max)":"1100 V","Current - Average Rectified (Io)":"1.4A","Operating Temperature - Junction":"-65°C~150°C","Voltage - Forward (Vf) (Max) @ If":"1.4 V @ 1.4 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$18.0750","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/f5b0a05537ab86a0d8f4acc7b4ded0ad.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/1N6631US/alternatives.json"},"ai":{"faq":[{"question":"What is the reverse recovery time of 1N6631US?","answer":"The 1N6631US has a reverse recovery time (trr) of 60 ns, classifying it as a fast recovery diode (trr ≤ 500 ns at Io > 200 mA). This suits it for switching applications where recovery charge must be minimized."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/microchip/1N6631US","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/microchip/1N6631US when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}