{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"1N6631","brand":"Microchip Technology","brandSlug":"microchip","productSlug":"1N6631","canonicalUrl":"https://icboms.com/microchip/1N6631","factsUrl":"https://icboms.com/api/mcp/products/1N6631","rawCanonicalId":null},"summary":{"shortDescription":"Microchip Technology 1N6631 Fast Recovery Rectifier Diode, Standard type, 1100 V DC Reverse, 1.4 A Average Rectified, 60 ns trr, Through Hole, A Axial Package, Bulk.","salesMarkdown":"## 1100 V blocking with fast recovery switching The 1N6631 is a fast recovery rectifier diode rated for 1100 V DC reverse voltage and 1.4 A average rectified current, making it suitable for high-voltage rectification and snubber circuits where blocking voltage capability above 1 kV is required. A 60 ns reverse recovery time classifies it as fast recovery (≤500 ns at >200 mA), which reduces switching losses in circuits operating above line frequency, such as switch-mode power supplies and flyback converters. ## Thermal and electrical margins for design-in Forward voltage drop is 1.4 V maximum at 1.4 A forward current, providing a predictable conduction loss figure for heatsink sizing in continuous-duty applications. Reverse leakage current is specified at 4 µA maximum at the full 1100 V reverse voltage, ensuring minimal off-state power dissipation in high-impedance blocking conditions. Junction capacitance is 40 pF at 10 V reverse bias and 1 MHz, a parameter that affects the switching edge rate and can be used to estimate reverse-recovery charge in high-frequency designs. ## Through-hole axial package and board integration The A, Axial package with through-hole mounting provides mechanical robustness for high-voltage isolation spacing and allows the diode to be heatsunk via the lead wires or a clip-on heatsink. Supplied in Bulk packaging, suitable for manual assembly or low-volume production where tape-and-reel feed is not required.","metaTitle":"Microchip 1N6631 Fast Recovery Rectifier, 1100 V, 1.4 A","metaDescription":"1N6631 Fast Recovery rectifier diode from Microchip Technology. 1100 V reverse voltage, 1.4 A average current, 60 ns trr. Active production, sourced to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Microchip Technology","Speed":"Fast Recovery =< 500ns, > 200mA (Io)","Series":"-","Package":"Bulk","Diode Type":"Standard","Mounting Type":"Through Hole","Package / Case":"A, Axial","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"40pF @ 10V, 1MHz","Reverse Recovery Time (trr)":"60 ns","Current - Reverse Leakage @ Vr":"4 µA @ 1100 V","Voltage - DC Reverse (Vr) (Max)":"1100 V","Current - Average Rectified (Io)":"1.4A","Operating Temperature - Junction":"-65°C~150°C","Voltage - Forward (Vf) (Max) @ If":"1.4 V @ 1.4 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/de93d913bd6732a72048d710ceab685f.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/1N6631/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/microchip/1N6631","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/microchip/1N6631 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}