{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"1N6625US/TR","brand":"Microchip Technology","brandSlug":"microchip","productSlug":"1N6625US-TR","canonicalUrl":"https://icboms.com/microchip/1N6625US-TR","factsUrl":"https://icboms.com/api/mcp/products/1N6625US%2FTR","rawCanonicalId":null},"summary":{"shortDescription":"Microchip Technology 1N6625US/TR fast recovery rectifier, standard diode type, 1100 V DC reverse, 1 A average rectified, 60 ns trr, SQ-MELF A package, tape and reel.","salesMarkdown":"## 1100 V fast recovery in a hermetic MELF The 1N6625US/TR is a 1100 V, 1 A fast recovery rectifier from Microchip Technology, housed in a surface-mount SQ-MELF (A-MELF) package. The 60 ns reverse recovery time (trr) makes it suitable for snubbing, flyback clamping, and boost-stage commutation where the voltage rail sits well above the usual 600 V fast-recovery ceiling. The SQ-MELF body is a hermetic ceramic package — the same footprint as the standard MELF but with a square profile for pick-and-place stability. ## Recovery speed and forward drop trade-off At 60 ns trr, this diode recovers faster than a standard recovery rectifier but with a forward voltage of 1.75 V at 1 A — about 0.3 V higher than a 1 kV standard recovery part. The extra Vf is the price of the speed; the trade-off matters in a 1100 V flyback clamp where the recovery losses at 100 kHz would otherwise overheat a slower diode. Reverse leakage is specified at 1 µA at the full 1100 V rating, which is tight for a 1 A device. The 10 pF junction capacitance at 10 V and 1 MHz confirms the small die size that enables the fast recovery — the capacitance is low enough that the diode does not add significant ringing in a snubber network.","metaTitle":"1N6625US/TR Microchip Fast Recovery Diode, 1100 V, 1 A","metaDescription":"Microchip 1N6625US/TR fast recovery rectifier: 1100 V, 1 A, 60 ns trr, SQ-MELF surface mount. Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Microchip Technology","Speed":"Fast Recovery =< 500ns, > 200mA (Io)","Series":"-","Package":"Tape & Reel (TR)","Diode Type":"Standard","Mounting Type":"Surface Mount","Package / Case":"SQ-MELF, A","Product Status":"Active","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"10pF @ 10V, 1MHz","Supplier Device Package":"A-MELF","Reverse Recovery Time (trr)":"60 ns","Current - Reverse Leakage @ Vr":"1 µA @ 1100 V","Voltage - DC Reverse (Vr) (Max)":"1100 V","Current - Average Rectified (Io)":"1A","Operating Temperature - Junction":"-65°C~150°C","Voltage - Forward (Vf) (Max) @ If":"1.75 V @ 1 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$14.6400","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/aac8096c1ffbd150eb23a7a2c5cc2cd4.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/1N6625US%2FTR/alternatives.json"},"ai":{"faq":[{"question":"What is the reverse recovery time of the 1N6625US/TR?","answer":"The 1N6625US/TR has a reverse recovery time (trr) of 60 ns, which places it in the Fast Recovery category (≤ 500 ns, > 200 mA Io)."},{"question":"What package does the 1N6625US/TR use?","answer":"The 1N6625US/TR comes in a surface-mount SQ-MELF, A package (supplier device package A-MELF), supplied on tape and reel."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/microchip/1N6625US-TR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/microchip/1N6625US-TR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}