{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"1N6624US","brand":"Microchip Technology","brandSlug":"microchip","productSlug":"1N6624US","canonicalUrl":"https://icboms.com/microchip/1N6624US","factsUrl":"https://icboms.com/api/mcp/products/1N6624US","rawCanonicalId":null},"summary":{"shortDescription":"Microchip Technology 1N6624US fast recovery rectifier diode, standard type, 990 V DC reverse voltage, 1 A average rectified current, 50 ns reverse recovery time, SQ-MELF A package, surface mount, bulk.","salesMarkdown":"The 1N6624US is a Microchip Technology fast recovery rectifier diode rated for 990 V DC reverse voltage and 1 A average rectified current, with a forward voltage of 1.55 V at 1 A. The 500 nA reverse leakage at 990 V is tight for a 1 A diode at this voltage class — it tells you the die has clean passivation and the junction holds off the field without micro-plasma leakage paths. The SQ-MELF A package (also called A-MELF) is a surface-mount cylindrical body with metallized end caps — it reflows like a standard SMD but the cylindrical shape means the solder fillet wets around the entire end cap, giving a stronger joint than a flat SOD-123 in high-vibration environments. The 10 pF junction capacitance at 10 V is low enough that the diode does not load the switching node with extra charge storage. Microchip lists the 1N6624US as Active.","metaTitle":"Microchip 1N6624US Fast Recovery Diode, 990V, 1A, SQ-MELF","metaDescription":"Microchip 1N6624US fast recovery rectifier, 990V 1A, 50ns trr, 1.55V Vf. Active production, SQ-MELF A package. Sourced to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Microchip Technology","Speed":"Fast Recovery =< 500ns, > 200mA (Io)","Series":"-","Package":"Bulk","Diode Type":"Standard","Mounting Type":"Surface Mount","Package / Case":"SQ-MELF, A","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"10pF @ 10V, 1MHz","Supplier Device Package":"A-MELF","Reverse Recovery Time (trr)":"50 ns","Current - Reverse Leakage @ Vr":"500 nA @ 990 V","Voltage - DC Reverse (Vr) (Max)":"990 V","Current - Average Rectified (Io)":"1A","Operating Temperature - Junction":"-65°C~150°C","Voltage - Forward (Vf) (Max) @ If":"1.55 V @ 1 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/aac8096c1ffbd150eb23a7a2c5cc2cd4.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/1N6624US/alternatives.json"},"ai":{"faq":[{"question":"What is the reverse recovery time of the 1N6624US?","answer":"The 1N6624US has a reverse recovery time (trr) of 50 ns, which qualifies it as a fast recovery diode (≤ 500 ns at > 200 mA)."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/microchip/1N6624US","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/microchip/1N6624US when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}