{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"1N6621US/TR","brand":"Microchip Technology","brandSlug":"microchip","productSlug":"1N6621US-TR","canonicalUrl":"https://icboms.com/microchip/1N6621US-TR","factsUrl":"https://icboms.com/api/mcp/products/1N6621US%2FTR","rawCanonicalId":null},"summary":{"shortDescription":"Microchip Technology 1N6621US/TR standard fast recovery diode, 2A average rectified current, 400V reverse voltage, 45ns trr, SQ-MELF D-5A package, Tape & Reel.","salesMarkdown":"## Fast recovery diode for 400V bulk rail snubbing The Microchip Technology 1N6621US/TR is a standard fast recovery diode rated for 2A average rectified current (Io) and 400V DC reverse voltage (Vr). Its 45ns reverse recovery time (trr) places it in the Fast Recovery category (≤500ns, >200mA), making it suited for snubbing, freewheeling, and clamp applications where switching losses in the diode dominate over conduction losses. This sets the conduction loss at 3.2W peak — the SQ-MELF D-5A package must dissipate that through the board copper, not a heatsink. The 500nA reverse leakage at 400V is negligible at 25°C but doubles roughly every 10°C junction rise; at 150°C it climbs into the microamp range and adds to the thermal budget. Junction capacitance is 10pF at 10V, 1MHz. For a 400V rail snubber, the capacitance at the operating reverse voltage will be lower — the C-V curve typical for this class drops to ~2-3pF at 400V. This keeps the switching energy per cycle small enough for 100kHz+ hard-switched topologies.","metaTitle":"Microchip 1N6621US/TR Fast Recovery Diode, 2A 400V SQ-MELF","metaDescription":"Microchip Technology 1N6621US/TR standard fast recovery diode, 2A average rectified current, 400V reverse voltage, 45ns trr.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Microchip Technology","Speed":"Fast Recovery =< 500ns, > 200mA (Io)","Series":"-","Package":"Tape & Reel (TR)","Diode Type":"Standard","Mounting Type":"Surface Mount","Package / Case":"SQ-MELF, A","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"1N6621","Capacitance @ Vr, F":"10pF @ 10V, 1MHz","Supplier Device Package":"D-5A","Reverse Recovery Time (trr)":"45 ns","Current - Reverse Leakage @ Vr":"500 nA @ 400 V","Voltage - DC Reverse (Vr) (Max)":"400 V","Current - Average Rectified (Io)":"2A","Operating Temperature - Junction":"-65°C~150°C","Voltage - Forward (Vf) (Max) @ If":"1.6 V @ 2 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$12.7200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/aac8096c1ffbd150eb23a7a2c5cc2cd4.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/1N6621US%2FTR/alternatives.json"},"ai":{"faq":[{"question":"What is the reverse recovery time of 1N6621US/TR?","answer":"The 1N6621US/TR has a reverse recovery time (trr) of 45ns, which classifies it as a Fast Recovery diode per the ≤500ns, >200mA Io spec. This is fast enough for 100-200kHz hard-switched converters but not for ZVS/ZCS resonant stages where sub-20ns devices are preferred."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/microchip/1N6621US-TR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/microchip/1N6621US-TR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}