{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"1N6620US","brand":"Microchip Technology","brandSlug":"microchip","productSlug":"1N6620US","canonicalUrl":"https://icboms.com/microchip/1N6620US","factsUrl":"https://icboms.com/api/mcp/products/1N6620US","rawCanonicalId":null},"summary":{"shortDescription":"Microchip Technology 1N6620US fast recovery rectifier diode, 220 V reverse voltage, 1.2 A average current, 30 ns reverse recovery time, SQ-MELF surface mount package, active production.","salesMarkdown":"## 30 ns reverse recovery — switching speed for the fast-recovery class The 1N6620US is a standard fast-recovery rectifier diode from Microchip Technology, rated for a 30 ns reverse recovery time (trr) at the 1.2 A forward current level. This 30 ns trr places it firmly in the fast-recovery class (< 500 ns per the spec definition), meaning the diode sweeps out stored charge quickly when switching from forward conduction to reverse blocking — the primary parameter that determines switching loss in a rectifier stage. The 220 V DC reverse voltage rating and 1.2 A average rectified current define the continuous operating envelope: a 220 V DC bus or peak repetitive reverse stress is the ceiling, and the 1.2 A average is the thermal limit for the device in free-air or on a heatsink trace. Reverse leakage is specified at 500 nA maximum at 220 V — this is a low-leakage figure that matters for circuits where the diode sits across a high-impedance node and leakage current could bias the load or discharge a hold-up capacitor. ## Hermetic SQ-MELF package — hi-rel surface-mount deployment The 1N6620US is supplied in the SQ-MELF package (Supplier Device Package A-MELF), a hermetic surface-mount ceramic package with metallized end caps. Hermetic construction means the die is sealed against moisture and contaminants — this is the package choice for military, aerospace, and high-reliability applications where a plastic-encapsulated device would risk failure under humidity or outgassing. For a satellite power supply or an avionics DC-DC converter that sees cold soak at -55°C and internal heating to 125°C, this device operates within its rated junction temperature without derating the reverse voltage or forward current below the datasheet limits. Package capacitance is 10 pF at 10 V reverse bias, 1 MHz — the junction capacitance contributes to the switching loss during voltage transitions, and a 10 pF figure is typical for a 1.2 A fast-recovery die in this voltage class. ## Active production — sourcing through qualified distribution For a BOM line that requires this exact hermetic fast-recovery diode, the active status removes the urgency of a lifetime buy or a board-spin for a replacement.","metaTitle":"Microchip 1N6620US Fast Recovery Diode","metaDescription":"1N6620US from Microchip Technology: 220V 1.2A fast recovery rectifier in hermetic SQ-MELF package. 30ns trr, -65°C to 150°C junction temp.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Microchip Technology","Speed":"Fast Recovery =< 500ns, > 200mA (Io)","Series":"-","Package":"Bulk","Diode Type":"Standard","Mounting Type":"Surface Mount","Package / Case":"SQ-MELF, A","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"1N6620","Capacitance @ Vr, F":"10pF @ 10V, 1MHz","Supplier Device Package":"A-MELF","Reverse Recovery Time (trr)":"30 ns","Current - Reverse Leakage @ Vr":"500 nA @ 220 V","Voltage - DC Reverse (Vr) (Max)":"220 V","Current - Average Rectified (Io)":"1.2A","Operating Temperature - Junction":"-65°C~150°C","Voltage - Forward (Vf) (Max) @ If":"1.4 V @ 1.2 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$12.5400","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/aac8096c1ffbd150eb23a7a2c5cc2cd4.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/1N6620US/alternatives.json"},"ai":{"faq":[{"question":"What is the reverse recovery time of the 1N6620US?","answer":"The 1N6620US has a reverse recovery time (trr) of 30 ns."},{"question":"What package does the 1N6620US come in?","answer":"The 1N6620US is supplied in the SQ-MELF (Surface Mount Quadruple Metallized End Face) package, also designated as the A-MELF supplier device package. This is a hermetic ceramic surface-mount package with metallized end caps, designed for high-reliability military and aerospace applications."},{"question":"What is the maximum junction temperature for the 1N6620US?","answer":"This covers the full military temperature grade and allows operation in avionics, satellite, and engine-bay environments where the ambient temperature may exceed 125°C."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/microchip/1N6620US","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/microchip/1N6620US when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}